scholarly journals Anisotropic Quantum Transport through a Single Spin Channel in the Magnetic Semiconductor EuTiO 3

2020 ◽  
Vol 32 (32) ◽  
pp. 2004409
Author(s):  
Kazuki Maruhashi ◽  
Kei S. Takahashi ◽  
Mohammad Saeed Bahramy ◽  
Sunao Shimizu ◽  
Ryosuke Kurihara ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Magnetic Semiconductor ◽  
Spin Channel ◽  
Single Spin

Anisotropic Quantum Transport through a Single Spin Channel in the Magnetic Semiconductor EuTiO 3

2020 ◽  
Vol 32 (24) ◽  
pp. 1908315 ◽  
Author(s):  
Kazuki Maruhashi ◽  
Kei S. Takahashi ◽  
Mohammad Saeed Bahramy ◽  
Sunao Shimizu ◽  
Ryosuke Kurihara ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Magnetic Semiconductor ◽  
Spin Channel ◽  
Single Spin

scholarly journals Harmonic generation predominantly from a single spin channel in a half metal

2021 ◽  
Vol 103 (10) ◽  
Author(s):  
G. P. Zhang ◽  
Y. H. Bai
Keyword(s):  
Harmonic Generation ◽  
Spin Channel ◽  
Single Spin ◽  
Half Metal

scholarly journals Enhancement of quantum transport efficiency in a noisy spin channel

2018 ◽  
Vol 51 (14) ◽  
pp. 145101
Author(s):  
Naghi Behzadi ◽  
Bahram Ahansaz ◽  
Abbas Ektesabi
Keyword(s):  
Quantum Transport ◽  
Transport Efficiency ◽  
Spin Channel

Spin dynamics and quantum transport in magnetic semiconductor quantum structures

1999 ◽  
Vol 200 (1-3) ◽  
pp. 130-147 ◽  
Author(s):  
D.D Awschalom ◽  
N Samarth
Keyword(s):  
Quantum Transport ◽  
Spin Dynamics ◽  
Magnetic Semiconductor ◽  
Quantum Structures

SPIN DEPENDENT TRANSPORT IN QUANTUM AND CLASSICALLY CONFIGURED DEVICES

2006 ◽  
Vol 16 (02) ◽  
pp. 639-658 ◽  
Author(s):  
H. L. GRUBIN ◽  
H. L. CUI
Keyword(s):  
Quantum Transport ◽  
Magnetic Semiconductor ◽  
Equation Of Motion ◽  
Hole Transport ◽  
Spin Splitting ◽  
Differential Conductance ◽  
Conduction Bands ◽  
Spin Dependent Transport ◽  
Dependent Transport ◽  
And Diffusion

This paper presents of development of quantum transport equations for barrier devices with both electron and hole transport in dilute magnetic semiconductor (DMS) structures. The equations are developed from the time dependent equation of motion of the density matrix equation in the coordinate representation, from which both the spin drift and diffusion and transient Wigner equations are obtained, for a system in which high 'g' factor materials result in significant spin-splitting of the valence and conduction bands. Then for a structure in which the DMS layer is confined to the first barrier solutions to the coupled Poisson's and spin dependent Wigner equations yield the IV and carrier distributions. Negative differential conductance as well as the significant unequal spinup and spin down charge distributions are obtained.

Bidirectional temperature-sensitive magnetic semiconductor and its application

1989 ◽  
Vol 136 (1) ◽  
pp. 32
Author(s):  
K. Seki ◽  
J. Shida ◽  
K. Murakami
Keyword(s):  
Magnetic Semiconductor ◽  
Temperature Sensitive

DEVELOPMENT OF PRINCIPLES FOR CONSTRUCTING A PRE-TRANSFORMER PART OF MAGNETIC-SEMICONDUCTOR PULSE GENERATORS

2017 ◽  
Vol 2017 (47) ◽  
pp. 45-53 ◽  
Author(s):  
I.V. Volkov ◽  
◽  
V.I. Zozulev ◽  
N.I. Kuskova ◽  
O.I. Khrysto ◽  
...  
Keyword(s):  
Magnetic Semiconductor ◽  
Pulse Generators

Quantum Transport in Si:P δ-Layer Wires

2020 ◽  
Author(s):  
Juan P. Mendez ◽  
Denis Mamaluy ◽  
Xujiao Gao ◽  
Evan M. Anderson ◽  
DeAnna M. Campbell ◽  
...  
Keyword(s):  
Quantum Transport
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