2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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9784863487635

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SISPAD 2020 Committees

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241620 ◽

2020 ◽

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Dynamic Simulation of Write ‘1’ Operation in the Bi-stable 1-Transistor SRAM Cell

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241653 ◽

2020 ◽

Author(s):

Tapas Dutta ◽

Fikru Adamu-Lema ◽

Asen Asenov ◽

Yuniarto Widjaja ◽

Valerii Nebesnyi

Keyword(s):

Dynamic Simulation ◽

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Automatic Modeling of Logic Device Performance Based on Machine Learning and Explainable AI

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241681 ◽

2020 ◽

Author(s):

Seungju Kim ◽

Kwangseok Lee ◽

Hyeon-Kyun Noh ◽

Youngkyu Shin ◽

Kyu-Baik Chang ◽

...

Keyword(s):

Machine Learning ◽

Device Performance ◽

Logic Device ◽

Automatic Modeling ◽

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Multiband Phase Space Operator for Narrow Bandgap Semiconductor Devices

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241595 ◽

2020 ◽

Author(s):

Lukas Schulz ◽

Dirk Schulz

Keyword(s):

Phase Space ◽

Semiconductor Devices ◽

Space Operator ◽

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Compact modeling of gate leakage phenomenon in GaN HEMTs

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241666 ◽

2020 ◽

Author(s):

Kexin Li ◽

Eiji Yagyu ◽

Hisashi Saito ◽

Koon Hoo Teo ◽

Shaloo Rakheja

Keyword(s):

Compact Modeling ◽

Gate Leakage ◽

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Future of Power Electronics from TCAD Perspective

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241652 ◽

2020 ◽

Author(s):

Terry Ma

Keyword(s):

Power Electronics

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Electromigration Model for Platinum Hotplates

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241645 ◽

2020 ◽

Author(s):

Lado Filipovic

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Time-Resolved Mode Space based Quantum-Liouville type Equations applied onto DGFETs

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241644 ◽

2020 ◽

Author(s):

Lukas Schulz ◽

Dirk Schulz

Keyword(s):

Liouville Type ◽

Time Resolved ◽

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On the Physical Mechanism of Negative Capacitance Effect in Ferroelectric FET

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241628 ◽

2020 ◽

Author(s):

Masaharu Kobayashi

Keyword(s):

Physical Mechanism ◽

Negative Capacitance ◽

Capacitance Effect

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Numerical Solution of the Constrained Wigner Equation

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241624 ◽

2020 ◽

Author(s):

Robert Kosik ◽

Johann Cervenka ◽

Hans Kosina

Keyword(s):

Numerical Solution ◽

Wigner Equation

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