DEVELOPMENT OF PRINCIPLES FOR CONSTRUCTING A PRE-TRANSFORMER PART OF MAGNETIC-SEMICONDUCTOR PULSE GENERATORS

2017 ◽  
Vol 2017 (47) ◽  
pp. 45-53 ◽  
Author(s):  
I.V. Volkov ◽  
◽  
V.I. Zozulev ◽  
N.I. Kuskova ◽  
O.I. Khrysto ◽  
...  
Keyword(s):  
Magnetic Semiconductor ◽  
Pulse Generators

SELECTION OF THE DRIVE OF THE PULSE GENERATOR FOR WAVE DEFORMATION HARDENING

2020 ◽  
Author(s):  
Andrey Kirichek ◽  
Dmitriy Solovyev
Keyword(s):  
Strain Hardening ◽  
Pulse Generator ◽  
Surface Plastic Deformation ◽  
Surface Plastic ◽  
Impact Frequency ◽  
Metal Consumption ◽  
Pulse Generators ◽  
Energy Impact ◽  
Deformation Hardening ◽  
Selection Of

The article is devoted to the analysis of known structures of impact devices used in industry in order to obtain recommendations for their adaptation or when creating new structures for wave strain hardening by surface plastic deformation. The analysis was carried out on the used drive and on the main parameters of impact devices: impact energy, impact frequency, relative metal consumption and efficiency. The options are the best combinations of parameters for electric, pneumatic and hydraulic drives. Recommendations are given on the use of such devices, with appropriate adaptation, as pulse generators for wave strain hardening.

Magnetic studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles

2018 ◽  
Vol 10 (5) ◽  
pp. 05005-1-05005-5
Author(s):  
I. D. Stolyarchuk ◽  
◽  
I. Rogalska ◽  
S. V. Koretskii ◽  
I. Stefaniuk ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Nanoparticles ◽  
Magnetic Studies ◽  
Diluted Magnetic

The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells

2015 ◽  
Vol 15 ◽  
pp. S26-S29 ◽  
Author(s):  
Hee Chang Jeon ◽  
Mingkai Li ◽  
Seung Joo Lee ◽  
Gukhyung Ihm ◽  
Tae Won Kang ◽  
...  
Keyword(s):  
Specific Heat ◽  
Quantum Wells ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

scholarly journals Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Licheng Fu ◽  
Yilun Gu ◽  
Guoxiang Zhi ◽  
Haojie Zhang ◽  
Rufei Zhang ◽  
...  
Keyword(s):  
Unit Cell Volume ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Vital Role ◽  
Ferromagnetic Transition ◽  
Chemical Pressure ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

AbstractWe report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.

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