Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe 2

2021 ◽  
pp. 2100905
Author(s):  
Jiaying Jian ◽  
Hao Feng ◽  
Pengfan Dong ◽  
Honglong Chang ◽  
Arnaud Vena ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interlayer Spacing ◽  
Operating Voltage ◽  
Resistive Switching Memory ◽  
Switching Memory

Effect of interlayer spacing in layered perovskites on resistive switching memory

Nanoscale ◽  
2019 ◽  
Vol 11 (30) ◽  
pp. 14330-14338 ◽  
Author(s):  
So-Yeon Kim ◽  
June-Mo Yang ◽  
Eun-Suk Choi ◽  
Nam-Gyu Park
Keyword(s):  
Resistive Switching ◽  
Interlayer Spacing ◽  
Resistive Switching Memory ◽  
Layered Perovskites ◽  
Switching Memory

We report here the effect of interlayer spacing in 2-dimensional (2D) perovskites of [C6H5(CH2)nNH3]2PbI4 (anilinium (An) for n = 0, benzylammonium (BzA) for n = 1 and phenylethylammonium (PEA) for n = 2) on resistive switching properties.

Enhanced performance and reduction in operating voltage of TiO2 thin film based resistive switching memory under optical stimulus

2020 ◽  
Vol 595 ◽  
pp. 412339
Author(s):  
Kiran D. More ◽  
Vijaykiran N. Narwade ◽  
Devidas I. Halge ◽  
Jagdish W. Dadge ◽  
Kashinath A. Bogle
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Tio2 Thin Film ◽  
Operating Voltage ◽  
Resistive Switching Memory ◽  
Switching Memory

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory
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