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scholarly journals Performance Improvement in E-Gun Deposited SiOx- Based RRAM Device by Switching Material Thickness Reduction

2022 ◽  
Vol 2161 (1) ◽  
pp. 012040
Author(s):  
Sourav Roy ◽  
Siddheswar Maikap
Keyword(s):  
Performance Improvement ◽  
Memory Device ◽  
Thickness Reduction ◽  
Data Retention ◽  
Vacancy Defects ◽  
Resistive Switching Memory ◽  
Material Thickness ◽  
Device Reliability ◽  
Switching Material ◽  
Switching Memory

Abstract A performance improvement by reduction in switching material thickness in a e-gun deposited SiOx based resistive switching memory device was investigated. Reduction in thickness cause thinner filamentary path formation during ON-state by controlling the vacancy defects. Thinner filament cause lowering of operation current from 500 μA to 100 μA and also improves the reset current (from >400 μA to <100 μA). Switching material thickness reduction also cause the forming free ability in the device. All these electrical parametric improvements enhance the device reliability performances. The device show >200 dc endurance, >3-hour data retention and >1000 P/E endurance with 100 ns pulses.

Low‐Operating‐Voltage Resistive Switching Memory Based on the Interlayer‐Spacing Regulation of MoSe 2

2021 ◽  
pp. 2100905
Author(s):  
Jiaying Jian ◽  
Hao Feng ◽  
Pengfan Dong ◽  
Honglong Chang ◽  
Arnaud Vena ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interlayer Spacing ◽  
Operating Voltage ◽  
Resistive Switching Memory ◽  
Switching Memory

Solution-Processed Natural Konjac Glucomannan Material for Resistive Switching Memory

2021 ◽  
Author(s):  
Yu-Chi Chang ◽  
Hao Jung Liu ◽  
Jia-Cheng Jian ◽  
Ya Lan Hsu
Keyword(s):  
Resistive Switching ◽  
Konjac Glucomannan ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory

2021 ◽  
Vol 130 (24) ◽  
pp. 244501
Author(s):  
Gauthier Lefevre ◽  
Tristan Dewolf ◽  
Nicolas Guillaume ◽  
Serge Blonkowski ◽  
Christelle Charpin-Nicolle ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Analytical Investigation ◽  
Forming Process ◽  
Resistive Switching Memory ◽  
Switching Memory

Halide Perovskites for Resistive Switching Memory

2021 ◽  
pp. 11673-11682
Author(s):  
Kaijin Kang ◽  
Wei Hu ◽  
Xiaosheng Tang
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Halide Perovskites ◽  
Switching Memory

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays

2021 ◽  
Author(s):  
Ayoub H. Jaafar ◽  
Lingcong Meng ◽  
Yasir J. Noori ◽  
Wenjian Zhang ◽  
Yisong Han ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Low‐Frequency‐Noise Spectroscopy of TaOx‐based Resistive Switching Memory

2021 ◽  
pp. 2100758
Author(s):  
Kota Sugawara ◽  
Hisashi Shima ◽  
Makoto Takahashi ◽  
Yasuhisa Naitoh ◽  
Hiroshi Suga ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Resistive Switching Memory ◽  
Noise Spectroscopy ◽  
Switching Memory

A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory

2021 ◽  
pp. 111578
Author(s):  
Min Ju Yun ◽  
Doowon Lee ◽  
Sungho Kim ◽  
Christian Wenger ◽  
Hee-Dong Kim
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Memory Structures
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