Radiation-induced polymerization of ethylene in a pilot plant. II. Development of wet-wall process

1979 ◽  
Vol 24 (3) ◽  
pp. 865-882 ◽  
Author(s):  
Masaaki Takehisa ◽  
Hiromasa Watanabe ◽  
Hirondo Kurihara ◽  
Yoshio Takasaka ◽  
Yoshio Maruyama ◽  
...  
1980 ◽  
Vol 25 (8) ◽  
pp. 1633-1638 ◽  
Author(s):  
Kouichi Yamaguchi ◽  
Hiromasa Watanabe ◽  
Takanobu Sugo ◽  
Terutaka Watanabe ◽  
Masaaki Takehisa ◽  
...  

1980 ◽  
Vol 25 (2) ◽  
pp. 277-285 ◽  
Author(s):  
Hiromasa Watanabe ◽  
Sueo Machi ◽  
Hirondo Kurihara ◽  
Takeshi Wada ◽  
Kouichi Yamaguchi ◽  
...  

1970 ◽  
Vol 8 (5) ◽  
pp. 445-449 ◽  
Author(s):  
F. T. Osborne ◽  
S. Omi ◽  
V. T. Stannett ◽  
E. P. Stahel

1979 ◽  
Vol 24 (8) ◽  
pp. 1831-1844 ◽  
Author(s):  
Masaaki Takehisa ◽  
Hiromasa Watanabe ◽  
Hirondo Kurihara ◽  
Kouichi Yamaguchi ◽  
Hayato Nakajima ◽  
...  

1979 ◽  
Vol 24 (3) ◽  
pp. 853-864 ◽  
Author(s):  
Masaaki Takehisa ◽  
Sueo Machi ◽  
Hiromasa Watanabe ◽  
Takashi Ueno ◽  
Seiichi Takahashi ◽  
...  

Author(s):  
T. Mukai ◽  
T. E. Mitchell

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.


Author(s):  
Robert C. Rau ◽  
John Moteff

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.


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