ChemInform Abstract: ELASTIC MODULI OF BORON-DOPED SILICON CARBIDE

1976 ◽  
Vol 7 (10) ◽  
pp. no-no ◽  
Author(s):  
W. S. COBLENZ
Keyword(s):  
Silicon Carbide ◽  
Elastic Moduli ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Superconductivity of hexagonal heavily-boron doped silicon carbide

2009 ◽  
Vol 150 (5) ◽  
pp. 052130 ◽  
Author(s):  
M Kriener ◽  
T Muranaka ◽  
Z-A Ren ◽  
J Kato ◽  
J Akimitsu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Specific heat and electronic states of superconducting boron-doped silicon carbide

2008 ◽  
Vol 78 (2) ◽  
Author(s):  
M. Kriener ◽  
Y. Maeno ◽  
T. Oguchi ◽  
Z.-A. Ren ◽  
J. Kato ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Specific Heat ◽  
Electronic States ◽  
Boron Doped ◽  
Doped Silicon

Influence of the H2 Dilution And Filament Temperature on the Properties of P Doped Silicon Carbide Thin Films Produced by Hot-Wire Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Morphological Data ◽  
Hot Wire ◽  
Carbon Incorporation ◽  
Filament Temperature ◽  
Hydrogen Dilution ◽  
Boron Doped ◽  
Doped Silicon

ABSTRACTThis work deals with the role of hydrogen dilution and filament temperature on the morphology, structure and electrical properties of nanocrystalline boron doped silicon carbide thin films produced by hot-wire technique. The structural and morphological data obtained by XRD, SEM and micro-Raman show that for filament temperatures and hydrogen dilutions above 2100°C and 90%, respectively, the surface morphology of the films is granular with a needle shape, while for lower filament temperatures and hydrogen dilutions the surface morphology gets honeycomb like. The SIMS analysis reveals that films produced with filament temperatures of about 2200°C and hydrogen dilution of 99% present a higher hydrogen and carbon incorporation than the films produced at lower temperatures and hydrogen dilutions. These results agree with the electrical and optical characteristics recorded that show that the films produced exhibit optical gaps in the range from 1.8 to 2 eV and transverse conductivities ranging from 10−1S/cm to 10−3 S/cm, consistent with the degree of films crystallinity and carbon incorporation recorded.

Boron-doped silicon carbide supported Pt catalyst for methanol electrooxidation

2014 ◽  
Vol 42 (7) ◽  
pp. 845-850 ◽  
Author(s):  
Li-li DONG ◽  
Xi-li TONG ◽  
Ying-yong WANG ◽  
Guo-qiang JIN ◽  
Xiang-yun GUO
Keyword(s):  
Silicon Carbide ◽  
Methanol Electrooxidation ◽  
Pt Catalyst ◽  
Boron Doped ◽  
Doped Silicon ◽  
Supported Pt Catalyst
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