ChemInform Abstract: IN SITU SURFACE ANALYSIS OF THE VAPOR PHASE EPITAXY OF GALLIUM ARSENIDE

1979 ◽  
Vol 10 (27) ◽  
Author(s):  
J. B. THEETEN ◽  
F. HOTTIER
Keyword(s):  
Gallium Arsenide ◽  
Surface Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy

In Situ Surface Analysis of the Vapor Phase Epitaxy of GaAs

1979 ◽  
Vol 126 (3) ◽  
pp. 450-460 ◽  
Author(s):  
J. B. Theeten ◽  
F. Hottier
Keyword(s):  
Surface Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy

Initial stages of gallium arsenide metalorganic vapor phase epitaxy

2016 ◽  
Vol 52 (10) ◽  
pp. 985-989 ◽  
Author(s):  
P. B. Boldyrevskii ◽  
D. O. Filatov ◽  
I. A. Kazantseva ◽  
D. S. Smotrin ◽  
M. V. Revin
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

2011 ◽  
Vol 315 (1) ◽  
pp. 204-207 ◽  
Author(s):  
Kai Cheng ◽  
S. Degroote ◽  
M. Leys ◽  
F. Medjdoub ◽  
J. Derluyn ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

CrystEngComm ◽  
2016 ◽  
Vol 18 (40) ◽  
pp. 7690-7695
Author(s):  
Seohwi Woo ◽  
Sangil Lee ◽  
Uiho Choi ◽  
Hyunjae Lee ◽  
Minho Kim ◽  
...  
Keyword(s):  
Chemical Reaction ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

Luminescence of TM3+ in Gallium Arsenide Grown by Metal-Organic Vapor Phase Epitaxy

1993 ◽  
Vol 301 ◽  
Author(s):  
Achim DÖrnen ◽  
Klaus Pressel ◽  
Christoph Hiller ◽  
Dieter Haase ◽  
JÜrgen Weber ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Excitation ◽  
Excitation Mechanism ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTWe investigate the excitation mechanism of the characteristic 4f luminescence 3H5 →3H6 of Tm3+ in GaAs by photoluminescence excitation spectroscopy. This luminescence transition is also used to study the incorporation of thulium into the GaAs lattice by angular dependent Zeeman spectroscopy.

In-situ X-ray studies of organometallic vapor phase epitaxy growth

1995 ◽  
Vol 30 (2-3) ◽  
pp. 99-108 ◽  
Author(s):  
P.H. Fuoss ◽  
D.W. Kisker ◽  
G.B. Stephenson ◽  
S. Brennan
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

2014 ◽  
Vol 407 ◽  
pp. 68-73 ◽  
Author(s):  
Guangxu Ju ◽  
Shingo Fuchi ◽  
Masao Tabuchi ◽  
Hiroshi Amano ◽  
Yoshikazu Takeda
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray

In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs

1999 ◽  
Vol 68 (3) ◽  
pp. 349-352 ◽  
Author(s):  
A. Rebey ◽  
B. El Jani ◽  
A. Leycuras ◽  
S. Laugt ◽  
P. Gibart
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Optical Monitoring
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