High-resolution electron microscopy study on crystal structures of high-Tc superconductors

1989 ◽  
Vol 12 (3) ◽  
pp. 228-243 ◽  
Author(s):  
Kenji Hiraga ◽  
Takeo Oku ◽  
Daisuke Shindo ◽  
Makoto Hirabayashi
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Crystal Structures ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
High Tc Superconductors ◽  
High Tc ◽  
Resolution Electron

scholarly journals High resolution electron microscopy study of the high Tc superconductor Tl0.5Pb0.5Sr4Cu2CO3O7

1993 ◽  
Vol 4 (1) ◽  
pp. 41-50 ◽  
Author(s):  
Maryvonne Hervieu ◽  
Claude Michel ◽  
Marielle Huve ◽  
Christine Martin ◽  
Antoine Maignan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
High Tc ◽  
High Tc Superconductor ◽  
Resolution Electron

scholarly journals HIGH RESOLUTION ELECTRON MICROSCOPY STUDY ON HIGH Tc SUPERCONDUCTOR Nd-Ba-Cu-O

1989 ◽  
Vol 38 (3) ◽  
pp. 508
Author(s):  
ZHAO JIAN-GUO ◽  
LI FANG-HUA ◽  
CHEN WEI ◽  
XIE SI-SHEN ◽  
CAO NING ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
High Tc ◽  
High Tc Superconductor ◽  
Resolution Electron

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

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