High efficiency triple junction thin film silicon solar cells with optimized electrical structure

2014 ◽  
Vol 23 (10) ◽  
pp. 1313-1322 ◽  
Author(s):  
Bofei Liu ◽  
Lisha Bai ◽  
Ze Chen ◽  
Xiaodan Zhang ◽  
Dekun Zhang ◽  
...  
2013 ◽  
Vol 119 ◽  
pp. 26-35 ◽  
Author(s):  
Soohyun Kim ◽  
Jin-Won Chung ◽  
Hyun Lee ◽  
Jinhee Park ◽  
Younho Heo ◽  
...  

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3416-3421 ◽  
Author(s):  
Y. Fujioka ◽  
A. Shimizu ◽  
H. Fukuda ◽  
T. Oouchida ◽  
S. Tachibana ◽  
...  

2012 ◽  
Vol 51 (10S) ◽  
pp. 10NB02 ◽  
Author(s):  
Tomomi Meguro ◽  
Andrea Feltrin ◽  
Takashi Suezaki ◽  
Mitsuru Ichikawa ◽  
Takashi Kuchiyama ◽  
...  

2013 ◽  
Vol 750-752 ◽  
pp. 970-973
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun

High-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.


2012 ◽  
Vol 1426 ◽  
pp. 131-135
Author(s):  
Mathieu Boccard ◽  
Matthieu Despeisse ◽  
Christophe Ballif

ABSTRACTThe challenge for all photovoltaic technologies is to maximize light absorption, convert photons with minimal losses to electrical charges and efficiently extract them towards the electrical circuit. For thin film silicon solar cells, a compromise must be found as light trapping is usually performed through textured interfaces, that are detrimental to the subsequent growth of dense and high quality silicon layers. We introduce here the concept of smoothening intermediate reflecting layers (IRL), enabling to combine high currents and good electrical quality in Micromorph devices in the superstrate configuration. After exposing the motivation for such structures, we validate the concept by showing a VOCenhancement when employing a polished silicon-oxide-based IRL. Shunting issues and additional reflection losses are pointed out with such technique, highlighting the need to develop alternative techniques for an efficient morphology adaptation before the microcrystalline silicon cell growth.


1998 ◽  
Vol 51 (1) ◽  
pp. 95-104 ◽  
Author(s):  
G.F. Zheng ◽  
W. Zhang ◽  
Z. Shi ◽  
D. Thorp ◽  
R.B. Bergmann ◽  
...  

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KB10 ◽  
Author(s):  
Takuya Matsui ◽  
Keigou Maejima ◽  
Adrien Bidiville ◽  
Hitoshi Sai ◽  
Takashi Koida ◽  
...  

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