The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content

2016 ◽  
Vol 213 (8) ◽  
pp. 2223-2228 ◽  
Author(s):  
X. Li ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
Z. S. Liu ◽  
...  
2018 ◽  
Vol 116 ◽  
pp. 114-121 ◽  
Author(s):  
Agata Bojarska ◽  
Jakub Goss ◽  
Szymon Stanczyk ◽  
Irina Makarowa ◽  
Dario Schiavon ◽  
...  

2011 ◽  
Vol 20 (03) ◽  
pp. 515-520
Author(s):  
Y. ZHANG ◽  
J.-P. LIU ◽  
T.-T. KAO ◽  
S. KIM ◽  
Y.-C. LEE ◽  
...  

A step-graded Al x Ga 1- x N electron blocking layer (EBL) is introduced to the InGaN -based edge-emitting blue-violet laser diode (LD) structure to suppress the undesired built-in interface polarization charges. When compared to a conventional abrupt Al 0.18 Ga 0.82 N EBL design, the step-graded Al x Ga 1- x N EBL design may help reduce the electron accumulation at the edge of the active region and hence improve the quantum efficiency in LD operation. The effects of the step-graded Al x Ga 1- x N EBL on the fabricated device performance are also investigated. LDs with the step-graded Al x Ga 1- x N EBL demonstrated significantly reduced threshold current density and increased slope efficiency under the continuous-wave operation.


2013 ◽  
Vol 10 (3) ◽  
pp. 346-349 ◽  
Author(s):  
Wei Yang ◽  
Ding Li ◽  
Juan He ◽  
Xiaodong Hu

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