electron leakage
Recently Published Documents


TOTAL DOCUMENTS

59
(FIVE YEARS 17)

H-INDEX

16
(FIVE YEARS 0)

2022 ◽  
Vol 8 (1) ◽  
Author(s):  
Lucia Coppo ◽  
Pradeep Mishra ◽  
Nora Siefert ◽  
Arne Holmgren ◽  
Svante Pääbo ◽  
...  

2021 ◽  
Vol 130 (18) ◽  
pp. 183104
Author(s):  
Liwen Cheng ◽  
Jiayi Zhang ◽  
Jundi Wang ◽  
Jun Zhang ◽  
Jinpeng Yang ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 334
Author(s):  
Barsha Jain ◽  
Ravi Teja Velpula ◽  
Moulik Patel ◽  
Sharif Md. Sadaf ◽  
Hieu Pham Trung Nguyen

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich p-type AlxGa(1−x)N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only up to some extent and adversely, holes are depleted in the EBL due to the formation of positive sheet polarization charges at the heterointerface of the last quantum barrier (QB)/EBL. Subsequently, the hole injection efficiency of the LED is severely limited. In this regard, we propose an EBL-free AlGaN deep UV LED structure using graded staircase quantum barriers (GSQBs) instead of conventional QBs without affecting the hole injection efficiency. The reported structure exhibits significantly reduced thermal velocity and mean free path of electrons in the active region, thus greatly confines the electrons over there and tremendously decreases the electron leakage into the p-region. Moreover, such specially designed QBs reduce the quantum-confined Stark effect in the active region, thereby improves the electron and hole wavefunctions overlap. As a result, both the internal quantum efficiency and output power of the GSQB structure are ~2.13 times higher than the conventional structure at 60 mA. Importantly, our proposed structure exhibits only ~20.68% efficiency droop during 0–60 mA injection current, which is significantly lower compared to the regular structure.


2021 ◽  
Vol 340 ◽  
pp. 127833
Author(s):  
Ling Li ◽  
Hiroaki Kitazawa ◽  
Xinhua Zhang ◽  
Liming Zhang ◽  
Yang Sun ◽  
...  

2021 ◽  
Vol 42 (07) ◽  
pp. 897-903
Author(s):  
Wei-dong WANG ◽  
◽  
Chun-shuang CHU ◽  
Dan-yang ZHANG ◽  
Wen-gang BI ◽  
...  

2021 ◽  
Vol 23 (5) ◽  
pp. 3214-3218
Author(s):  
Manuel Smeu ◽  
Kevin Leung

The solid–electrolyte interphase (SEI) that forms on lithium ion battery (LIB) anodes prevents degradation-causing transfer of electrons to the electrolyte.


2020 ◽  
Vol 1 (4) ◽  
pp. 105-113
Author(s):  
N Tabassum ◽  
IS Kheya ◽  
SA Ibn Asaduzzaman ◽  
SM Maniha ◽  
AH Fayz ◽  
...  

The finding of electron leakage during the electron transport within the mitochondrial membrane (in eukaryotes) or in the cell membrane of the prokaryotes is an important issue for the accumulation of the Reactive Oxygen Species (ROS) in the cytosol which in turn induce the probable aging of cells. In eukaryotes, mitochondrion is known to be the major site of the ROS generation in different pathological processes which may further cause cell damages as evident through the ischemia-reperfusion (I/R) injury, respiratory diseases, cell apoptosis, and even the onset of cancer. Thus, the mitochondrial leakage and the physiological effect of leaked protons and electrons grow up with future interest in energy metabolism. Current review focused on the physiological impact of electron/ proton leakage particularly in the eukaryotic cells based on the previous reports; emphasized on the prospects of the eukaryotic mitochondrion as a modulator of proton and electron leakage; and finally attempted to assess the regulatory mechanisms of such electron/ proton leakage.


Sign in / Sign up

Export Citation Format

Share Document