Numerical simulation of 405-nm InGaN laser diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

2009 ◽  
Author(s):  
Yen-Kuang Kuo ◽  
Ying-Chung Lu ◽  
Miao-Chan Tsai ◽  
Sheng-Horng Yen
Keyword(s):  
Numerical Simulation ◽  
Barrier Layer ◽  
Laser Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer

Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes

2020 ◽  
Vol 1014 ◽  
pp. 126-130
Author(s):  
Wan Sheng Zuo ◽  
Yin Xi Niu ◽  
Liu Yang ◽  
Xiu Zhen Chi ◽  
Jin Jin Liu ◽  
...  
Keyword(s):  
Blue Light ◽  
Barrier Layer ◽  
Light Emitting Diodes ◽  
Electrostatic Discharge ◽  
Blocking Layer ◽  
Optical Performance ◽  
Spreading Effect ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Wide Range

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

2018 ◽  
Vol 116 ◽  
pp. 114-121 ◽  
Author(s):  
Agata Bojarska ◽  
Jakub Goss ◽  
Szymon Stanczyk ◽  
Irina Makarowa ◽  
Dario Schiavon ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Graded Index ◽  
Nitride Laser

PERFORMANCE ENHANCEMENT OF InGaN-BASED LASER DIODES USING A STEP-GRADED AlxGa1-xN ELECTRON BLOCKING LAYER

2011 ◽  
Vol 20 (03) ◽  
pp. 515-520
Author(s):  
Y. ZHANG ◽  
J.-P. LIU ◽  
T.-T. KAO ◽  
S. KIM ◽  
Y.-C. LEE ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Performance Enhancement ◽  
Laser Diodes ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Device Performance ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Electron Accumulation ◽  
Continuous Wave Operation

A step-graded Al x Ga 1- x N electron blocking layer (EBL) is introduced to the InGaN -based edge-emitting blue-violet laser diode (LD) structure to suppress the undesired built-in interface polarization charges. When compared to a conventional abrupt Al 0.18 Ga 0.82 N EBL design, the step-graded Al x Ga 1- x N EBL design may help reduce the electron accumulation at the edge of the active region and hence improve the quantum efficiency in LD operation. The effects of the step-graded Al x Ga 1- x N EBL on the fabricated device performance are also investigated. LDs with the step-graded Al x Ga 1- x N EBL demonstrated significantly reduced threshold current density and increased slope efficiency under the continuous-wave operation.

The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content

2016 ◽  
Vol 213 (8) ◽  
pp. 2223-2228 ◽  
Author(s):  
X. Li ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
Z. S. Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Indium Content ◽  
Blocking Layer ◽  
Electron Blocking Layer

Advantage of tapered and graded AlGaN electron blocking layer in InGaN-based blue laser diodes

2013 ◽  
Vol 10 (3) ◽  
pp. 346-349 ◽  
Author(s):  
Wei Yang ◽  
Ding Li ◽  
Juan He ◽  
Xiaodong Hu
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Blocking Layer ◽  
Electron Blocking Layer
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