AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Light Emitting ◽

Sapphire Substrates ◽

Deep Ultraviolet ◽

Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Publisher's Note: “AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy” [Appl. Phys. Lett. 98, 081110 (2011)]

10.1063/1.3675971 ◽

2012 ◽

Vol 100 (2) ◽

pp. 029901

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Theodore D. Moustakas

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Quantum Efficiency ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

Applied Physics Express ◽

10.1143/apex.4.092102 ◽

2011 ◽

Vol 4 (9) ◽

pp. 092102 ◽

Cited By ~ 44

Author(s):

Myunghee Kim ◽

Takehiko Fujita ◽

Shinya Fukahori ◽

Tetsuhiko Inazu ◽

Cyril Pernot ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Sapphire Substrates ◽

Deep Ultraviolet ◽

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

10.1063/1.3559842 ◽

2011 ◽

Vol 98 (8) ◽

pp. 081110 ◽

Cited By ~ 90

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Theodore D. Moustakas

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Quantum Efficiency ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

10.1063/1.4812237 ◽

2013 ◽

Vol 102 (24) ◽

pp. 241113 ◽

Cited By ~ 134

Author(s):

Peng Dong ◽

Jianchang Yan ◽

Junxi Wang ◽

Yun Zhang ◽

Chong Geng ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Sapphire Substrates ◽

Deep Ultraviolet ◽

Improved Performance ◽

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

10.1063/1.1633672 ◽

2003 ◽

Vol 83 (24) ◽

pp. 4906-4908 ◽

Cited By ~ 225

Author(s):

Satoshi Watanabe ◽

Norihide Yamada ◽

Masakazu Nagashima ◽

Yusuke Ueki ◽

Chiharu Sasaki ◽

...

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Light Emitting ◽

Highly Efficient ◽

Near Ultraviolet ◽

Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates

Journal of Applied Physics ◽

10.1063/1.2798537 ◽

2007 ◽

Vol 102 (8) ◽

pp. 084503 ◽

Cited By ~ 30

Author(s):

Chang-Chi Pan ◽

Chi-Hsun Hsieh ◽

Chih-Wei Lin ◽

Jen-Inn Chyi

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Output ◽

Light Emitting ◽

Sapphire Substrates ◽

Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes

Applied Physics A ◽

10.1007/s00339-015-9345-3 ◽

2015 ◽

Vol 120 (3) ◽

pp. 841-846 ◽

Cited By ~ 5

Author(s):

Tae Hoon Park ◽

Tae Geun Kim

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Applied Physics Express ◽

10.7567/apex.10.031002 ◽

2017 ◽

Vol 10 (3) ◽

pp. 031002 ◽

Cited By ~ 168

Author(s):

Takayoshi Takano ◽

Takuya Mino ◽

Jun Sakai ◽

Norimichi Noguchi ◽

Kenji Tsubaki ◽

...

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

External Quantum Efficiency ◽

Light Emitting Diodes ◽

Extraction Efficiency ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Light Emitting ◽

Deep Ultraviolet ◽

High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes

Journal of Materials Chemistry C ◽

10.1039/c9tc01421g ◽

2019 ◽

Vol 7 (22) ◽

pp. 6534-6538 ◽

Cited By ~ 4

Author(s):

Shanshan Chen ◽

Chenxiao Xu ◽

Xinhua Pan ◽

Haiping He ◽

Jingyun Huang ◽

...

Keyword(s):

Quantum Wells ◽

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Threading Dislocations ◽

Light Emitting ◽

Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates.