Gettering and Defect Engineering in Semiconductor Technology (GADEST 2021)

<p>Defect engineering is a powerful tool that can be used to tailor the properties of metal–organic frameworks (MOFs). Here, we incorporate defects through ball milling to systematically vary the porosity of the giant pore MOF, MIL-100 (Fe). We show that milling leads to the breaking of metal–linker bonds, generating more coordinatively unsaturated metal sites, and ultimately causes amorphisation. Pair distribution function analysis shows the hierarchical local structure is partially</p><p>retained, even in the amorphised material. We find that the solvent toluene stabilises the MIL-100 (Fe) framework against collapse and leads to a substantial rentention of porosity over the non-stabilised material.</p>

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Application of AFP Nanoprobing Light-Induced Photovoltaic Current in the Failure Analysis

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0427 ◽

2017 ◽

Author(s):

C.Q. Chen ◽

P.T. Ng ◽

G.B. Ang ◽

Francis Rivai ◽

S.L. Ting ◽

...

Keyword(s):

Image Analysis ◽

Failure Analysis ◽

Photovoltaic Effect ◽

Electrical Characterization ◽

Fault Isolation ◽

Device Performance ◽

Semiconductor Technology ◽

Current Image ◽

Scaling Down ◽

Detailed Circuit

Abstract As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected areas can be isolated, but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device performance and to prove the problematic structure electrically. But sometimes the EFA spot coverage is too big to do nanoprobing analysis. Then further narrow-down is quite critical to identify the suspected structure before nanoprobing is employed. That means there is a gap between global fault isolation and localized device analysis. Under these kinds of situation, PVC and AFP current image are offen options to identify the suspected structure, but they still have their limitation for many soft defect or marginal fails. As in this case, PVC and AFP current image failed to identify the defect in the spot range. To overcome the shortage of PVC and AFP current image analysis, laser was innovatively applied in our current image analysis in this paper. As is known to all, proper wavelength laser can induce the photovoltaic effect in the device. The photovoltaic effect induced photo current can bring with it some information of the device. If this kind of information was properly interpreted, it can give us some clue of the device performance.

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Metal Bridge Defects Localization by a Tiny Leakage between One of Bridged Signals and VDD (GND)

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0370 ◽

2014 ◽

Author(s):

Chunlei Wu ◽

Suying Yao

Keyword(s):

Circuit Model ◽

Functional Modules ◽

Semiconductor Technology ◽

Simple Circuit ◽

Lock In

Abstract As semiconductor technology continues to advance to smaller dimensions and more complex circuit designs, it is becoming more challenging to locate the resistive short directly between two metal lines (signals) due to a metal bridge defect. Especially these two metal lines are very long and relevant to many functional modules. After studying the failed circuit model, we found there should be a tiny leakage between one of the bridged signals and one of common power signals (such as VDD and GND) on a failed IC compared with the reference one, if there is a metal bridge defect between these two bridged signals. The tiny leakage between one of the bridged signals and one of power signals is an indirect leakage that is a mapping of the direct resistive short between these two bridged signals. The metal bridge defect could be pinpointed with the tiny leakage between one of the bridged signals and one of power signals by Lock-in IR-OBIRCH. It is an easier and faster way to locate the metal bridge defects. In this paper, the basic and simple circuit model with a metal bridge defect will be presented and two cases will be studied to demonstrate how to localize a metal bridge defect by the tiny leakage between one of the bridged signals and one of power signals.

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