Asymmetric electrode geometry induced photovoltaic behavior for self-powered organic artificial synapses

Optoelectronic synapses have attracted considerable attention because of their promising potential in artificial visual perception systems for neuromorphic computing. Despite remarkable progress in mimicking synaptic functions, reduction of energy consumption of artificial synapses is still a substantial obstacle that is required to be overcome to promote advanced emerging applications. Herein, we propose a zero-power artificial optoelectrical synapses using ultrathin organic crystalline semiconductors, which can be self-driven by exploiting the photovoltaic effect induced by asymmetric electrode geometry contacts. The photogenerated charge carrier collection at the two electrodes is unbalanced due to the asymmetric contacts, leading to the in-plane current without bias voltage. Our devices successfully mimic a range of important synaptic functions, such as paired-pulse facilitation (PPF) and spike rate-dependent plasticity (SRDP). Furthermore, we demonstrate that our devices can realize the simulation of image sharpening under self-driven optical-sensing synaptic operations, offering prospects for the development of retinomorphic visual systems.

DIAGNOSIS OF SEMICONDUCTOR HETEROSYSTEMS USING THE PHOTOVOLTAIC METHOD

The diagnostic method is as follows: the lateral photo-EMF spectral characteristics are measured, generated in the structure (or device) when illuminated by wavelength light with a near the edge of the basic semiconductor layer. For illustrations of efficiency method the given part of the measurement results for Schottky contact samples with a nitrogen concentration of 5% and a thermal annealing temperature of 900 and 950°C. It has been found that a significant character and a small amplitude of such a characteristic indicates qualitative at a homogeneity and the necessary magnitude of the potential barrier (or barriers), that it is necessary to form to make Schottky contact or other structure. A significant characteristic and a small amplitude of such a characteristic indicates a qualitative one-line and the required value of a potential barrier (or barriers) that must be formed for the manufacture of a semiconductor structure or device. If the spectral characteristic has one maximum and amplitude that is many times higher than the amplitude of a significant characteristic, then this indicates a formed transition layer between components of heterosystems with high, compared with a quasine-power region of semiconductor, conductivity. The presence of such a layer increases the probability breaks down of the microelectronic device. Investigation of the distribution of lateral photours along the metal semiconductor interface compliant interpretation of spectral characteristics features. The linear significant form of distribution of EMF confirms the presence of a transition layer with a lower doping level compared with GaAs. An important feature of the diagnostic method is its non-destructive character, as well as the possibility of applying to semiconductor or devices based on them, in which the photovoltaic effect may occur.

Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films

Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100 percent switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr,Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.