Influence of the Electron Scattering Anisotropy upon the Phonon Drag Effect in n-Ge and n-Si

1969 ◽  
Vol 31 (1) ◽  
pp. 9-15
Author(s):  
V. D. Iskra ◽  
G. T. Gostyuk
Keyword(s):  
Electron Scattering ◽  
Phonon Drag ◽  
Drag Effect ◽  
Scattering Anisotropy

Note on the Theory of Phonon-Drag Effect in Metals

1970 ◽  
Vol 39 (1) ◽  
pp. K51-K53 ◽  
Author(s):  
M. Rösler
Keyword(s):  
Phonon Drag ◽  
Drag Effect

scholarly journals Phonon drag effect in nanocomposite FeSb2

2013 ◽  
Vol 3 (1) ◽  
pp. 31-36 ◽  
Author(s):  
Mani Pokharel ◽  
Huaizhou Zhao ◽  
Kevin Lukas ◽  
Zhifeng Ren ◽  
Cyril Opeil ◽  
...  
Keyword(s):  
Phonon Drag ◽  
Drag Effect ◽  
Image Position

Abstract

Phonon-drag effect inTiSe2−xSxmixed compounds

1987 ◽  
Vol 36 (8) ◽  
pp. 4249-4253 ◽  
Author(s):  
J. -M. Lopez-Castillo ◽  
A. Amara ◽  
S. Jandl ◽  
J.-P. Jay-Gerin ◽  
C. Ayache ◽  
...  
Keyword(s):  
Phonon Drag ◽  
Drag Effect

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe2thin films

2014 ◽  
Vol 35 (5) ◽  
pp. 052001 ◽  
Author(s):  
T Namitha Asokan ◽  
K S Urmila ◽  
Rajani Jacob ◽  
Rachel Reena Philip ◽  
G S Okram ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Optical And Electrical Properties ◽  
Phonon Drag ◽  
Drag Effect

Phonon Drag Effect in p-Type InSb

1965 ◽  
Vol 12 (1) ◽  
pp. 329-332 ◽  
Author(s):  
P. Byszewski ◽  
M. Gronkowska ◽  
J. Kołodziejczak
Keyword(s):  
Phonon Drag ◽  
Drag Effect ◽  
P Type

Anomalous Phonon Drag Effect in Graphite

1977 ◽  
Vol 43 (5) ◽  
pp. 1664-1671 ◽  
Author(s):  
Ko Sugihara ◽  
Hisashi Ohshima ◽  
Kiyoshi Kawamura ◽  
Takuro Tsuzuku
Keyword(s):  
Phonon Drag ◽  
Drag Effect
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