On the Phonon Drag Effect Contribution to Thermomagnetic Phenomena

1967 ◽  
Vol 24 (1) ◽  
pp. 361-372 ◽  
Author(s):  
C. N. Plăvttu
1970 ◽  
Vol 39 (1) ◽  
pp. K51-K53 ◽  
Author(s):  
M. Rösler
Keyword(s):  

2013 ◽  
Vol 3 (1) ◽  
pp. 31-36 ◽  
Author(s):  
Mani Pokharel ◽  
Huaizhou Zhao ◽  
Kevin Lukas ◽  
Zhifeng Ren ◽  
Cyril Opeil ◽  
...  

Abstract


1987 ◽  
Vol 36 (8) ◽  
pp. 4249-4253 ◽  
Author(s):  
J. -M. Lopez-Castillo ◽  
A. Amara ◽  
S. Jandl ◽  
J.-P. Jay-Gerin ◽  
C. Ayache ◽  
...  
Keyword(s):  

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.


2014 ◽  
Vol 35 (5) ◽  
pp. 052001 ◽  
Author(s):  
T Namitha Asokan ◽  
K S Urmila ◽  
Rajani Jacob ◽  
Rachel Reena Philip ◽  
G S Okram ◽  
...  

1965 ◽  
Vol 12 (1) ◽  
pp. 329-332 ◽  
Author(s):  
P. Byszewski ◽  
M. Gronkowska ◽  
J. Kołodziejczak
Keyword(s):  

1977 ◽  
Vol 43 (5) ◽  
pp. 1664-1671 ◽  
Author(s):  
Ko Sugihara ◽  
Hisashi Ohshima ◽  
Kiyoshi Kawamura ◽  
Takuro Tsuzuku
Keyword(s):  

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.


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