Negative Magnetoresistance of Neutron-Transmutation-Doped Gallium Arsenide at Variable-Range Hopping

1988 ◽  
Vol 146 (1) ◽  
pp. 199-206 ◽  
Author(s):  
R. Rentzsch ◽  
K. J. Friedland ◽  
A. N. Ionov
Keyword(s):  
Gallium Arsenide ◽  
Negative Magnetoresistance ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Neutron Transmutation

Variable-Range Hopping in Neutron-Transmutation-Doped Gallium Arsenide

1986 ◽  
Vol 137 (2) ◽  
pp. 691-700 ◽  
Author(s):  
R. Rentzsch ◽  
K. J. Friedland ◽  
A. N. Ionov ◽  
M. N. Matveev ◽  
I. S. Shlimak ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Neutron Transmutation

Negative magnetoresistance inp-typeβ−FeSi2single crystals in two regimes of variable-range hopping

1997 ◽  
Vol 56 (3) ◽  
pp. 1005-1008 ◽  
Author(s):  
K. Arushanov ◽  
K. G. Lisunov ◽  
U. Malang ◽  
Ch. Kloc ◽  
E. Bucher
Keyword(s):  
Negative Magnetoresistance ◽  
Variable Range Hopping ◽  
Variable Range

Separating positive and negative magnetoresistance for polyaniline-silicon nanocomposites in variable range hopping regime

2013 ◽  
Vol 102 (21) ◽  
pp. 212403 ◽  
Author(s):  
Rakesh Sadu ◽  
Neel Haldolaarachchige ◽  
Daniel Chen ◽  
David P. Young
Keyword(s):  
Negative Magnetoresistance ◽  
Variable Range Hopping ◽  
Variable Range

Negative magnetoresistance in the variable-range-hopping regime inn-type GaAs

1989 ◽  
Vol 39 (11) ◽  
pp. 8059-8061 ◽  
Author(s):  
F. Tremblay ◽  
M. Pepper ◽  
D. Ritchie ◽  
D. C. Peacock ◽  
J. E. F. Frost ◽  
...  
Keyword(s):  
Negative Magnetoresistance ◽  
Variable Range Hopping ◽  
Variable Range

THE HOPPING CONDUCTION OF NEUTRON TRANSMUTED GERMANIUM

1994 ◽  
Vol 08 (07) ◽  
pp. 883-889 ◽  
Author(s):  
A.G. ZABRODSKII ◽  
A.G. ANDREEV
Keyword(s):  
Temperature Dependence ◽  
Nearest Neighbor ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Coulomb Gap ◽  
Variable Range ◽  
Neutron Transmutation ◽  
Mi Transition ◽  
Main Impurity

An investigation was made of a batch of samples of neutron transmutation-doped (NTD) Ge:Ga with the degree of compensation K=0.3 and the concentration of the main impurity (Ga) from N=3.6 · 1014cm−3 to Nc=2.5 · 1017cm−3, corresponding to the MI transition. The following were studied: the parameters of NTD Ge:Ga, the temperature dependence of hopping transport, the ɛ3 region of the nearest neighbor hopping (NNH), the saturation of NNH, variable range hopping (VRH) and the Coulomb gap.

On the negative magnetoresistance in the variable range hopping regime in n-type CuInSe2

1994 ◽  
Vol 144 (1) ◽  
pp. 149-156 ◽  
Author(s):  
S. M. Wasim ◽  
L. Essaleh ◽  
J. Galibert ◽  
J. Leotin
Keyword(s):  
Negative Magnetoresistance ◽  
Variable Range Hopping ◽  
Variable Range

Giant negative-magnetoresistance in variable-range hopping

1994 ◽  
Vol 194-196 ◽  
pp. 1103-1104 ◽  
Author(s):  
Y. Carmi ◽  
X.L. Hu ◽  
A.J. Dahm ◽  
H.W. Jiang
Keyword(s):  
Negative Magnetoresistance ◽  
Variable Range Hopping ◽  
Variable Range
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