Magnetotransport studies of Fe vacancy-ordered Fe4+δSe5nanowires

We studied the electrical transport of Fe4+δSe5single-crystal nanowires exhibiting √5 × √5 Fe-vacancy order and mixed valence of Fe. Fe4+δSe5compound has been identified as the parent phase of FeSe superconductor. A first-order metal-insulator (MI) transition of transition temperatureTMI∼ 28 K is observed at zero magnetic fields (B). Colossal positive magnetoresistance emerges, resulting from the magnetic field-dependent MI transition.TMIdemonstrates anisotropic magnetic field dependence with the preferred orientation along thecaxis. At temperatureT< ∼17 K, the state of near-magnetic field-independent resistance, which is due to spin polarized even at zero fields, preserves under magnetic fields up toB= 9 T. The Arrhenius law shift of the transition on the source-drain frequency dependence reveals that it is a nonoxide compound with the Verwey-like electronic correlation. The observation of the magnetic field-independent magnetoresistance at low temperature suggests it is in a charge-ordered state belowT∼ 17 K. The results of the field orientation measurements indicate that the spin-orbital coupling is crucial in √5 × √5 Fe vacancy-ordered Fe4+δSe5at low temperatures. Our findings provide valuable information to better understand the orbital nature and the interplay between the MI transition and superconductivity in FeSe-based materials.

SKP1 drives the prophase I to metaphase I transition during male meiosis

The meiotic prophase I to metaphase I (PI/MI) transition requires chromosome desynapsis and metaphase competence acquisition. However, control of these major meiotic events is poorly understood. Here, we identify an essential role for SKP1, a core subunit of the SKP1–Cullin–F-box (SCF) ubiquitin E3 ligase, in the PI/MI transition. SKP1 localizes to synapsed chromosome axes and evicts HORMAD proteins from these regions in meiotic spermatocytes. SKP1-deficient spermatocytes display premature desynapsis, precocious pachytene exit, loss of PLK1 and BUB1 at centromeres, but persistence of HORMAD, γH2AX, RPA2, and MLH1 in diplonema. Strikingly, SKP1-deficient spermatocytes show sharply reduced MPF activity and fail to enter MI despite treatment with okadaic acid. SKP1-deficient oocytes exhibit desynapsis, chromosome misalignment, and progressive postnatal loss. Therefore, SKP1 maintains synapsis in meiosis of both sexes. Furthermore, our results support a model where SKP1 functions as the long-sought intrinsic metaphase competence factor to orchestrate MI entry during male meiosis.

Применение магнито-индуцированных переходов в атомах -=SUP=-87-=/SUP=-Rb в когерентных оптических процессах

The prospects of using Fg = 1-Fe = 3 magnetically induced (MI) transitions of the 87Rb D2 line to form optical resonances in strong magnetic fields up to 3 kG have been experimentally demonstrated. A micrometer-thick cell filled with the Rb atomic vapor is used. A simple and convenient method for determining the magnetic induction with a micron spatial resolution is presented. In this case, there is no need for a reference frequency spectrum. The probability of the MI transition in the magnetic field range of 0.3–2 kG may exceed the probability of a “normal” atomic transition; therefore, it is reasonable to use MI transition at the frequency of “coupling” or probe lasers in Lambda- and V systems to form EIT- resonance (also called dark resonance) in the process of electromagnetically induced transparency (EIT). The formation of dark resonances in strong magnetic fields, when there is a frequency shift of the dark resonance up to ~ 10 GHz, has a number of practical applications. Note that when using “ordinary” atomic transitions in the Lambda- system for magnetic fields of > 1 kG, dark resonances are practically absent.

Effect of La3+ Substitution at Bi-Site on Transport Properties of Bi0.3-xLaxPr0.3Ca0.4Mn0.1Cr0.9MnO3

Magnetic and electronic transport properties of Bi0.3-xLaxPr0.3Ca0.4Mn0.1Cr0.9O3 (0≤x≤0.2) manganites have been investigated by measurements of AC-susceptibility, resistivity and magnetoresistance. The samples were prepared using conventional solid-state synthesis method. Magnetic susceptibility versus temperature measurements showed all samples exhibit ferromagnetic to paramagnetic transition with Curie temperature, Tc enhanced from 111 K (x=0) to 174 K (x=0.2). Electrical resistivity measurements of the samples in zero field showed increase of metal-insulator (MI) transition temperature from 58 K(x=0) to 88 K(x=0.2). The increase in both Tc and TMI indicates enhancement of double exchange (DE) interaction involving Mn3+ and Mn4+ ions as a result of weakening of the hybridization effect between Bi3+ 6s2 lone pair with O orbital due to La3+ substitution. La substitution in the Bi-based compound is suggested reduce MnO6 octahedral distortion hence increasing delocalization of charge carriers. The observed variation in MR behavior due to La substitution indicates the substitution influence the MR mechanism of extrinsic and intrinsic behavior in Bi0.3-xLaxPr0.3Ca0.4Mn0.1Cr0.9O3 .

Modulation of metal-insulator transitions of NdNiO3/LaNiO3/NdNiO3 trilayers via thickness control of the LaNiO3 layer

Over the last few decades, manipulating the metal-insulator (MI) transition in perovskite oxides (ABO3) via an external control parameter has been attempted for practical purposes, but with limited success. The substitution of A-site cations is the most widely used technique to tune the MI transition. However, this method introduces unintended disorder, blurring the intrinsic properties. The present study reports the modulation of MI transitions in [10 nm-NdNiO3/t-LaNiO3/10 nm-NdNiO3/SrTiO3 (100)] trilayers (t = 5, 7, 10, and 20 nm) via the control of the LaNiO3 thickness. Upon an increase in the thickness of the LaNiO3 layer, the MI transition temperature undergoes a systematic decrease, demonstrating that bond disproportionation, the MI, and antiferromagnetic transitions are modulated by the LaNiO3 thickness. Because the bandwidth and the MI transition are determined by the Ni-O-Ni bond angle, this unexpected behavior suggests the transfer of the bond angle from the lower layer into the upper. The bond-angle transfer eventually induces a structural change of the orthorhombic structure of the middle LaNiO3 layer to match the structure of the bottom and the top NdNiO3, as evidenced by transmission electron microscopy. This engineering layer sequence opens a novel pathway to the manipulation of the key properties of oxide nickelates, such as the bond disproportionation, the MI transition, and unconventional antiferromagnetism with no impact of disorder.

THERMAL HYSTERESIS IN RESISTIVITY AND MAGNETIZATION OF PrCa(Sr)MnO

Thermal hysteresis in resistivity and magnetization of Pr 0.65 Ca 0.35-x Sr x MnO 3(x = 0–0.35) manganites has been systematically studied to establish the interplay of their charge and spin-ordering. The increasing Sr concentration (x) transforms the charge-ordered (CO)/antiferromagnetic (AFM) insulating system (for x = 0) into a mixed-phased one (for x = 0.1) with sharp metal–insulator (MI) transition and finally leads to a ferromagnetic (FM) metallic (for x = 0.35) system. It has been found that the interplay of charge and spin-ordering is higher in mixed-phased state and the thermal hysteresis loop area is bigger. It increases with the increase of sharpness of MI transition. Interplay of charge and spin-ordering decreases with the increase of either CO/AFM insulating or FM metallic phase and is almost absent in completely CO/AFM insulating (with x = 0) or FM metallic (with x = 0.35) states bringing about zero thermal hysteresis loop.

Metal-Insulator Phase Transition in VO2: A Look from the Far Infrared Side

ABSTRACTVanadium dioxide (VO2) displays a well-known metal-insulator (MI) transition at a temperature of 68°C. In this study we use terahertz time-domain spectroscopy (THz-TDS) to investigate the optical properties of VO2 thin films in the vicinity of the MI transition temperature in the frequency range 0.1 – 1.5 THz. We observe the interesting effect that the phase of the transmitted THz field through the conducting VO2 film is delayed in comparison to the phase of the same THz signal transmitted through the insulating VO2 film. This is in contrast to the expected behavior of a homogeneous, conducting film. This observation shows that even at temperatures significantly above the transition temperature, the formation of a homogeneous, conducting film is incomplete. We demonstrate that effective-medium theory (EMT) in combination with a Drude model accounting for the conductivity of metallic domains formed in the VO2 film accounts for all our observations. We show that the Maxwell-Garnett EMT is consistent with our observations, whereas the Bruggeman EMT fails to account for our observations.