THE HOPPING CONDUCTION OF NEUTRON TRANSMUTED GERMANIUM

1994 ◽  
Vol 08 (07) ◽  
pp. 883-889 ◽  
Author(s):  
A.G. ZABRODSKII ◽  
A.G. ANDREEV
Keyword(s):  
Temperature Dependence ◽  
Nearest Neighbor ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Coulomb Gap ◽  
Variable Range ◽  
Neutron Transmutation ◽  
Mi Transition ◽  
Main Impurity

An investigation was made of a batch of samples of neutron transmutation-doped (NTD) Ge:Ga with the degree of compensation K=0.3 and the concentration of the main impurity (Ga) from N=3.6 · 1014cm−3 to Nc=2.5 · 1017cm−3, corresponding to the MI transition. The following were studied: the parameters of NTD Ge:Ga, the temperature dependence of hopping transport, the ɛ3 region of the nearest neighbor hopping (NNH), the saturation of NNH, variable range hopping (VRH) and the Coulomb gap.

Variable Range Hopping Conduction in CuInSe2in the Presence of a Coulomb Gap

1993 ◽  
Vol 32 (S3) ◽  
pp. 675 ◽  
Author(s):  
J. G. Albornoz ◽  
E. Hernández ◽  
S. M. Wasim ◽  
P. Bocaranda
Keyword(s):  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Coulomb Gap ◽  
Variable Range ◽  
Variable Range Hopping Conduction

Electrically Conducting Thin Films by Ion Implantation of Pyrolyzed Polyacrylonitrile

1988 ◽  
Vol 128 ◽  
Author(s):  
R. A. Basheer
Keyword(s):  
Ion Implantation ◽  
Temperature Dependence ◽  
Three Dimensional ◽  
Chemical Doping ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Specific Chemical ◽  
Variable Range ◽  
Heat Treated ◽  
Variable Range Hopping Conduction

ABSTRACTHeat treatment of polyacrylonitrile leads to products with semiconductor to metal like conductivities. The electrical properties of these materials are further modified by ion implantation. It is noted that the conductivity (∼10-7 (Ω cm)-1) of heat treated Polyacrylonitrile at 435°C (PAN435) increases upon ion implantation with As+, Kr+, Cl+ of F+ reaching a maximum value of 8.9 × 10-1 (Ω cm)-1 at as does of 5 × 1016 ion/cm2 and an energy of 200 KeV for the case of F+ implantation. On the other hand, ion implantation of the more conducting heat treated PAN at 750°C (PAN750) leads to a decrease in the electrical conductivity of the material. It is proposed that the conductivity modifications are primarily due to structural rearrangements induced by the energetic ions. Specific chemical doping contribution to conductivity is noted for halogen implantation in PAN435. The temperature dependence of conductivity of PAN heat treated at 750°C suggests a two path conduction, namely, a three dimensional variable range hopping conduction and a metallic conduction. After ion implantation, the conductivity-temperature dependence is interpreted in terms of a variable range hopping conduction mechanism.

Mott variable range hopping transport in thermal evaporated vanadyl 2, 3 naphthalocyanine thin films

2021 ◽  
pp. 125029
Author(s):  
I. Dhanya ◽  
Malathy Krishnan ◽  
Reny Renji ◽  
M.K. Anu ◽  
Rachel G. Varghese ◽  
...  
Keyword(s):  
Thin Films ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range
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