Negative Magnetoresistance in the Variable-Range-Hopping Transport of Strongly Underdoped La2-xSrxCuO4

In this work, we confirm and extend the results of a previous study where a variable range hopping transport through localized impurity states has been found to dominate the electrical transport properties of 3×1020 cm-3 and 5×1020 cm-3 Al+ implanted 4H-SiC layers after 1950-2000 °C post implantation annealing. In this study, samples with longer annealing times have been taken into account. The temperature dependence of these sample conductivity follows a variable range hopping law, consistent with a nearly two-dimensional hopping transport of non-interacting carriers that in the highest doped samples, persists up to around room temperature. This result indicates that the hole transport becomes strongly anisotropic on increasing the doping level. At the origin of this unusual electrical behavior, may be the presence of basal plane stacking faults, actually observed by transmission electron microscopy in one of the 5×1020 cm-3 samples

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Negative Magnetoresistance of Neutron-Transmutation-Doped Gallium Arsenide at Variable-Range Hopping

physica status solidi (b) ◽

10.1002/pssb.2221460120 ◽

1988 ◽

Vol 146 (1) ◽

pp. 199-206 ◽

Cited By ~ 13

Author(s):

R. Rentzsch ◽

K. J. Friedland ◽

A. N. Ionov

Keyword(s):

Gallium Arsenide ◽

Negative Magnetoresistance ◽

Variable Range Hopping ◽

Variable Range ◽

Neutron Transmutation

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Negative magnetoresistance inp-typeβ−FeSi2single crystals in two regimes of variable-range hopping

Physical Review B ◽

10.1103/physrevb.56.1005 ◽

1997 ◽

Vol 56 (3) ◽

pp. 1005-1008 ◽

Cited By ~ 16

Author(s):

K. Arushanov ◽

K. G. Lisunov ◽

U. Malang ◽

Ch. Kloc ◽

E. Bucher

Keyword(s):

Negative Magnetoresistance ◽

Variable Range Hopping ◽

Variable Range

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HOPPING TRANSPORT ALONG A POTENTIAL WALL: OSCILLATIONS OF THE MAGNETORESISTANCE IN A PARALLEL FIELD

International Journal of Modern Physics B ◽

10.1142/s0217979293003243 ◽

1993 ◽

Vol 07 (18) ◽

pp. 3313-3326

Author(s):

M.E. RAIKH ◽

T.V. SHAHBAZYAN

Keyword(s):

Magnetic Field ◽

Pronounced Effect ◽

Variable Range Hopping ◽

General Increase ◽

Hopping Transport ◽

Variable Range ◽

Parallel Field ◽

Shrinkage Effect ◽

2D System ◽

Localized Electrons

We study the variable-range-hopping magnetoresistance of a 2D system of localized electrons in the presence of a boundary parallel to the plane of the 2D electrons. In a magnetic field B parallel to the plane, the magnetoresistance oscillates with B if the distance between the plane and the boundary is not too large. These oscillations result from the interference of the amplitude of the in-plane tunneling path with the amplitude of the path reflected by the boundary. We show that the orbital shrinkage effect, altering differently both amplitudes, strongly enhances the interference. At the same time, the amplitude of oscillations appears to be small compared to the general increase in the resistance caused by the orbital shrinkage. The most pronounced effect of the interference can be seen in the differential magnetoresistance R−1(B)∂R(B)/∂B, which we analyze numerically.

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