Optical properties of InGaN based multiple quantum wells on low threading dislocation density GaN films fabricated by air-bridged lateral epitaxial growth

2003 ◽  
Vol 0 (7) ◽  
pp. 2116-2119
Author(s):  
A. Ishibashi ◽  
G. Sugahara ◽  
Y. Kawaguchi ◽  
Y. Yamada ◽  
T. Taguchi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Threading Dislocation ◽  
Threading Dislocation Density

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

2014 ◽  
Vol 11 (3-4) ◽  
pp. 750-753 ◽  
Author(s):  
Matthew J. Davies ◽  
Philip Dawson ◽  
Fabien C.-P. Massabuau ◽  
Fabrice Oehler ◽  
Rachel A. Oliver ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Threading Dislocation ◽  
Threading Dislocation Density

Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

2004 ◽  
Vol 37 (3) ◽  
pp. 391-394 ◽  
Author(s):  
J. C. Zhang ◽  
J. F. Wang ◽  
Y. T. Wang ◽  
M. Wu ◽  
J. P. Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dislocation Density ◽  
Quantum Wells ◽  
Chemical Vapour ◽  
Interface Roughness ◽  
Multiple Quantum Wells ◽  
Structural Defects ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Edge Dislocations

InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ω scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as non-radiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.

Optical properties of CdTe/(Cd, Mn)Te multiple quantum wells

1986 ◽  
Vol 22 (9) ◽  
pp. 1785-1792 ◽  
Author(s):  
A. Nurmikko ◽  
R. Gunshor ◽  
L. Kolodziejski
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

scholarly journals Optical properties of GaN/AlN multiple quantum wells

2004 ◽  
Vol 131 (6) ◽  
pp. 389-392 ◽  
Author(s):  
T.Y Lin ◽  
Y.M Sheu ◽  
Y.F Chen ◽  
J.Y Lin ◽  
H.X Jiang
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Electronic structure and optical properties of [(ZnSe)m(CdSe)n]N-ZnSe multiple quantum wells

1994 ◽  
Vol 50 (19) ◽  
pp. 14416-14420 ◽  
Author(s):  
Shang-Fen Ren ◽  
Jian-Bai Xia ◽  
He-Xiang Han ◽  
Zhao-Ping Wang
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001)

2021 ◽  
Vol 36 (4) ◽  
pp. 045014
Author(s):  
C Himwas ◽  
S Kijamnajsuk ◽  
V Yordsri ◽  
C Thanachayanont ◽  
T Wongpinij ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lattice Matched
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