Surface processing of CdTe crystals by an excimer laser and its application in fabricating nuclear radiation detectors

2004 ◽  
Vol 1 (4) ◽  
pp. 1071-1074 ◽  
Author(s):  
M. Niraula ◽  
Y. Agata ◽  
K. Yasuda ◽  
A. Nakamura ◽  
T. Aoki ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Surface Processing ◽  
Nuclear Radiation Detectors

Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Laser Doping ◽  
Doping Technique ◽  
Nuclear Radiation Detectors

Silicon Material Growth for Nuclear Radiation Detectors

1982 ◽  
Vol 16 ◽  
Author(s):  
P. A. Glasow ◽  
B. O. Kolbesen
Keyword(s):  
Electronic Devices ◽  
Base Material ◽  
Radiation Detectors ◽  
High Energy ◽  
Nuclear Radiation ◽  
High Energy Particle ◽  
Energy Particle ◽  
Particle Detectors ◽  
X Ray ◽  
Nuclear Radiation Detectors

As a base material for semiconductor devices, silicon is more widely used than any other semiconductor. The physical properties, in particular the bandgap which is significantly larger than that of germanium, makes the material extremely important for electronic devices. The world's total annual production of silicon is at present some 2000 t [1]. Compared with this, the 10 kg/year of silicon that is used for detectors is rather modest. However, since work on semiconductor radiation detectors started 25 years ago, silicon in addition to germanium forms the centre of interest as the basis for production of nuclear radiation spectrometers, mainly as high energy particle detectors, but also as X-ray detectors.

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