A Broadband Current Preamplifier Configuration for Obtaining Htgh Resolutton Energy and Time Information from Nuclear Radiation Detectors

1972 ◽  
Vol 19 (1) ◽  
pp. 388-395 ◽  
Author(s):  
J. K. Millard ◽  
T. V. Blalock ◽  
N. W. Hill
2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  

2004 ◽  
Vol 1 (4) ◽  
pp. 1071-1074 ◽  
Author(s):  
M. Niraula ◽  
Y. Agata ◽  
K. Yasuda ◽  
A. Nakamura ◽  
T. Aoki ◽  
...  

1982 ◽  
Vol 16 ◽  
Author(s):  
P. A. Glasow ◽  
B. O. Kolbesen

As a base material for semiconductor devices, silicon is more widely used than any other semiconductor. The physical properties, in particular the bandgap which is significantly larger than that of germanium, makes the material extremely important for electronic devices. The world's total annual production of silicon is at present some 2000 t [1]. Compared with this, the 10 kg/year of silicon that is used for detectors is rather modest. However, since work on semiconductor radiation detectors started 25 years ago, silicon in addition to germanium forms the centre of interest as the basis for production of nuclear radiation spectrometers, mainly as high energy particle detectors, but also as X-ray detectors.


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