Microcrystalline silicon-carbon alloys as anti-reflection window layers in high efficiency thin film silicon solar cells

2008 ◽  
Vol 2 (4) ◽  
pp. 160-162 ◽  
Author(s):  
Tao Chen ◽  
Yuelong Huang ◽  
Deren Yang ◽  
Reinhard Carius ◽  
Friedhelm Finger
2004 ◽  
Vol 451-452 ◽  
pp. 280-284 ◽  
Author(s):  
M. Lejeune ◽  
W. Beyer ◽  
R. Carius ◽  
J. Müller ◽  
B. Rech

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3416-3421 ◽  
Author(s):  
Y. Fujioka ◽  
A. Shimizu ◽  
H. Fukuda ◽  
T. Oouchida ◽  
S. Tachibana ◽  
...  

2011 ◽  
Vol 1321 ◽  
Author(s):  
Peter Cuony ◽  
Duncan T.L. Alexander ◽  
Linus Löfgren ◽  
Michael Krumrey ◽  
Michael Marending ◽  
...  

ABSTRACTLower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.


2012 ◽  
Vol 51 (10S) ◽  
pp. 10NB02 ◽  
Author(s):  
Tomomi Meguro ◽  
Andrea Feltrin ◽  
Takashi Suezaki ◽  
Mitsuru Ichikawa ◽  
Takashi Kuchiyama ◽  
...  

2012 ◽  
Vol 1426 ◽  
pp. 131-135
Author(s):  
Mathieu Boccard ◽  
Matthieu Despeisse ◽  
Christophe Ballif

ABSTRACTThe challenge for all photovoltaic technologies is to maximize light absorption, convert photons with minimal losses to electrical charges and efficiently extract them towards the electrical circuit. For thin film silicon solar cells, a compromise must be found as light trapping is usually performed through textured interfaces, that are detrimental to the subsequent growth of dense and high quality silicon layers. We introduce here the concept of smoothening intermediate reflecting layers (IRL), enabling to combine high currents and good electrical quality in Micromorph devices in the superstrate configuration. After exposing the motivation for such structures, we validate the concept by showing a VOCenhancement when employing a polished silicon-oxide-based IRL. Shunting issues and additional reflection losses are pointed out with such technique, highlighting the need to develop alternative techniques for an efficient morphology adaptation before the microcrystalline silicon cell growth.


1998 ◽  
Vol 51 (1) ◽  
pp. 95-104 ◽  
Author(s):  
G.F. Zheng ◽  
W. Zhang ◽  
Z. Shi ◽  
D. Thorp ◽  
R.B. Bergmann ◽  
...  

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