P-2: Novel High Mobility Oxide TFT with Self-Aligned S/D Regions Formed by Wet-etch process

2016 ◽  
Vol 47 (1) ◽  
pp. 1129-1131 ◽  
Author(s):  
Kwang Hwan Ji ◽  
Jiyong Noh ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
Kwon-Shik Park ◽  
...  
Keyword(s):  
High Mobility ◽  
Oxide Tft ◽  
Wet Etch

High-mobility oxide TFT for circuit integration of AMOLEDs

2011 ◽  
Vol 19 (12) ◽  
pp. 867 ◽  
Author(s):  
Eri Fukumoto ◽  
Toshiaki Arai ◽  
Narihiro Morosawa ◽  
Kazuhiko Tokunaga ◽  
Yasuhiro Terai ◽  
...  
Keyword(s):  
High Mobility ◽  
Oxide Tft ◽  
Circuit Integration

High-mobility self-aligned top-gate oxide TFT for high-resolution AM-OLED

2013 ◽  
Vol 21 (11) ◽  
pp. 467-473 ◽  
Author(s):  
Narihiro Morosawa ◽  
Masanori Nishiyama ◽  
Yoshihiro Ohshima ◽  
Ayumu Sato ◽  
Yasuhiro Terai ◽  
...  
Keyword(s):  
High Resolution ◽  
High Mobility ◽  
Gate Oxide ◽  
Oxide Tft

Nickel Selective Etch for Contacts on Ge Based Devices

2014 ◽  
Vol 219 ◽  
pp. 105-108
Author(s):  
Farid Sebaai ◽  
Liesbeth Witters ◽  
Frank Holsteyns ◽  
Yoshida Yukifumi ◽  
Paul W. Mertens ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Aqueous Media ◽  
High Mobility ◽  
Device Performance ◽  
Selective Etch ◽  
New Challenges ◽  
Wet Etch

of high mobility channels materials like Ge. The introduction of Ge as channel material has already shown significant interests in term of device performance enhancement [1,2]. However, the use of Ge in CMOS integration has raised new challenges in terms of clean or wet etch steps since significant Ge loss occurs when it oxidizes in aqueous media.

10.1: High Mobility Self-Aligned Top-Gate Oxide TFT for High-Resolution AM-OLED

2013 ◽  
Vol 44 (1) ◽  
pp. 85-88 ◽  
Author(s):  
Narihiro Morosawa ◽  
Masanori Nishiyama ◽  
Yoshihiro Ohshima ◽  
Ayumu Sato ◽  
Yasuhiro Terai ◽  
...  
Keyword(s):  
High Resolution ◽  
High Mobility ◽  
Gate Oxide ◽  
Oxide Tft

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT using Trench Structure

2021 ◽  
pp. 1-1
Author(s):  
Junsung Kim ◽  
Do Hyung Kim ◽  
Seong-In Cho ◽  
Seung Hee Lee ◽  
Wooseok Jeong ◽  
...  
Keyword(s):  
High Mobility ◽  
Oxide Tft ◽  
Channel Shortening ◽  
Trench Structure

7-4: Invited Paper : Internal Compensation Type OLED Display Using High Mobility Oxide TFT

2017 ◽  
Vol 48 (1) ◽  
pp. 76-79 ◽  
Author(s):  
Yong Ho Jang ◽  
Dae Hwan Kim ◽  
Wooseok Choi ◽  
Min-Gu Kang ◽  
Kwang Il Chun ◽  
...  
Keyword(s):  
High Mobility ◽  
Oxide Tft ◽  
Oled Display
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