Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches

Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main carriers in silicon near the walls of the trenches at a forward bias. The proposed model considers the decrease of the series resistance of the Schottky diode drift region with an increase in the voltage at the rectifying contact due to the enrichment of silicon with electrons near the walls of the trenches. The proposed model is compared with the experimental results for Schottky diodes with a metal – oxide – semiconductor trench structure with a nominal reverse voltage of 45.0 V and a nominal forward current of 50.0 A. It is shown that the error in calculating the direct voltage value for the new model does not exceed 1.2 % in the range of direct currents from 20.0 to 50.0 A, which is 4.6–9.7 times less than the calculation error for the classical model. The results obtained can be used to develop the structure and geometry of Schottky diodes with a metal – oxide – semiconductor trench structure with required electrical parameters.

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

Exploring structured scripting cartographic technique of GMT for ocean seafloor modeling: A case of the East Indian Ocean

This paper examines spatial variations in the geomorphology of the Ninety East Ridge (NER), located in the Indian Ocean. The NER is an extraordinary long linear bathymetric feature with topography reflecting complex geophysical setting and geologic evolution. The research is based on a compilation of high-resolution bathymetric, geological, and gravity datasets clipped for the study area extent (65° - 107°E, 35°S - 21°N): General Bathymetric Chart of the Oceans (GEBCO), Earth Gravitational Model (EGM2008, EGM96). The submarine geomorphology of the NER was modeled by digitized cross-sectional profiles using Generic Mapping Tools (GMT). The availability of the method is explained by 1) the free datasets; 2) the open source GMT toolset; 3) the available tutorials of the GMT and the codes explained in this work. Three segments of the NER were selected, digitized, and modeled: 1) northern 89°E, 7°S to 90°E, 7°N; 2) central 88.4°E, 14.7°S to 88.8°E, 8.2°S; 3) southern 87.9°E, 17°S to 87.5°E, 27°S. Measured depths were visualized in graphs, compared, and statistically analyzed by the histograms. The northern segment has a steepness of 21.3° at the western slopes, and 14.5° at the eastern slope. The slopes on the eastern flank have dominant SE orientation. The central segment has a bell-shaped form, with the highest steepness comparing to the northern and southern segments. The eastern flank has a steepness of 49.5°. A local depression at a distance of 50 km off from the axis (90°E) continues parallel to the NER, with the shape of the narrow minor trench. The western slope has a steepness of 57.6°, decreasing to 15.6°. The southern segment has a dome-like shape form. Compared to the northern and central segments, it has a less pronounced ridge crest, with a steepness of 24.9° on the west. The eastern flank has a steepness of 36.8° until 70 km, gradually becoming steeper at 44.23°. A local minor trench structure can be seen on its eastern flank (100 km off the axis). This corresponds to the very narrow long topographic depressions stretching parallel to this segment of the NER at 90.5°E. The study contributes to regional geographic studies of Indian Ocean geomorphology and cartographic presentation of GMT functionality for marine research and oceanographic studies.

Archaeological Investigations at the Audrey-North Site (11GE20)

This chapter describes previous and recent archaeological investigations at the Audrey-North site (11Ge20) in the Lower Illinois River Valley. The Center for American Archaeology excavated from 1975 to 1983, exposing both Late Woodland and Cahokia-style structures, a circular sweatlodge, pit features, and a palisade segment. In 2000, Colleen Delaney-Rivera analyzed the ceramic artifacts recovered, identifying Woodland- and Mississippian-period pottery in addition to hybrid pots and non-local vessels. A magnetic gradiometry survey of the site in 2014 revealed two areas of interest for excavation: one Mississippian house and one unidentified anomaly. The house area was exposed with a backhoe, revealing a Stirling-phase (AD 1100–1200) wall trench house and associated pit features. Excavations over the other anomaly revealed a small early Mississippian wall trench structure, the floor of which was lined with yellow clay.