10.1: High Mobility Self-Aligned Top-Gate Oxide TFT for High-Resolution AM-OLED

2013 ◽  
Vol 44 (1) ◽  
pp. 85-88 ◽  
Author(s):  
Narihiro Morosawa ◽  
Masanori Nishiyama ◽  
Yoshihiro Ohshima ◽  
Ayumu Sato ◽  
Yasuhiro Terai ◽  
...  
Keyword(s):  
High Resolution ◽  
High Mobility ◽  
Gate Oxide ◽  
Oxide Tft

High-mobility self-aligned top-gate oxide TFT for high-resolution AM-OLED

2013 ◽  
Vol 21 (11) ◽  
pp. 467-473 ◽  
Author(s):  
Narihiro Morosawa ◽  
Masanori Nishiyama ◽  
Yoshihiro Ohshima ◽  
Ayumu Sato ◽  
Yasuhiro Terai ◽  
...  
Keyword(s):  
High Resolution ◽  
High Mobility ◽  
Gate Oxide ◽  
Oxide Tft

4.3:Invited Paper: High Mobility Oxide TFT for Large Area High Resolution AMOLED

2013 ◽  
Vol 44 (1) ◽  
pp. 18-21 ◽  
Author(s):  
Sang-Hee Ko Park ◽  
Jong Woo Kim ◽  
Minki Ryu ◽  
In Yong Eom ◽  
Jae-Eun Pi ◽  
...  
Keyword(s):  
High Resolution ◽  
High Mobility ◽  
Large Area ◽  
Oxide Tft

2.1: Invited Paper: 16.9‐Inch Flexible AMOLED Display with High Performance Top Gate Oxide TFT

2021 ◽  
Vol 52 (S2) ◽  
pp. 48-50
Author(s):  
YuanJun Hsu ◽  
Zhenguo Lin ◽  
Yihong Lu ◽  
BaiXiang Han ◽  
Weiran Cao ◽  
...  
Keyword(s):  
High Performance ◽  
Gate Oxide ◽  
Oxide Tft

Electron Scattering in Buried InGaAs MOSFET Channel with HfO2 Gate Oxide

2009 ◽  
Vol 1155 ◽  
Author(s):  
Serge Oktyabrsky ◽  
Padmaja Nagaiah ◽  
Vadim Tokranov ◽  
Sergei Koveshnikov ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Interface Layer ◽  
Oxide Interface ◽  
Channel Mobility ◽  
Group Iii ◽  
High K ◽  
Electron Transport Properties ◽  
Group Iii V Semiconductor

AbstractGroup III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T+1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012 cm-2.

Novel self-aligned top-gate oxide TFT for AMOLED displays

2012 ◽  
Vol 20 (1) ◽  
pp. 47 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Gate Oxide ◽  
Oxide Tft

S-Passivation of the Ge Gate Stack Using (NH4)2S

2012 ◽  
Vol 187 ◽  
pp. 23-26 ◽  
Author(s):  
Sonja Sioncke ◽  
Claudia Fleischmann ◽  
Dennis Lin ◽  
Evi Vrancken ◽  
Matty Caymax ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Oxide ◽  
Gate Stack ◽  
Process Flow ◽  
Oxide Deposition

The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.

35.3: Distinguished Paper: A Novel Self-Aligned Top-Gate Oxide TFT for AM-OLED Displays

2011 ◽  
Vol 42 (1) ◽  
pp. 479-482 ◽  
Author(s):  
Narihiro Morosawa ◽  
Yoshihiro Ohshima ◽  
Mitsuo Morooka ◽  
Toshiaki Arai ◽  
Tatsuya Sasaoka
Keyword(s):  
Gate Oxide ◽  
Oxide Tft

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

2009 ◽  
Vol 255 (17) ◽  
pp. 7831-7833 ◽  
Author(s):  
Santosh M. Bobade ◽  
Ji-Hoon Shin ◽  
Young-Je Cho ◽  
Jung-Sun You ◽  
Duck-Kyun Choi
Keyword(s):  
Room Temperature ◽  
Gate Oxide ◽  
Oxide Tft
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