Interface Engineering Ti 3 C 2 MXene/Silicon Self‐Powered Photodetectors with High Responsivity and Detectivity for Weak Light Applications

Small ◽  
2021 ◽  
pp. 2100439
Author(s):  
Weidong Song ◽  
Qing Liu ◽  
Jiaxin Chen ◽  
Zhao Chen ◽  
Xin He ◽  
...  
Keyword(s):  
Interface Engineering ◽  
High Responsivity ◽  
Weak Light ◽  
Self Powered

Interface Engineering To Boost Photoresponse Performance of Self-Powered, Broad-Bandwidth PEDOT:PSS/Si Heterojunction Photodetector

2016 ◽  
Vol 8 (29) ◽  
pp. 19158-19167 ◽  
Author(s):  
Zhimin Liang ◽  
Pingyang Zeng ◽  
Pengyi Liu ◽  
Chuanxi Zhao ◽  
Weiguang Xie ◽  
...  
Keyword(s):  
Interface Engineering ◽  
Broad Bandwidth ◽  
Self Powered

scholarly journals High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics

2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Roda Nur ◽  
Takashi Tsuchiya ◽  
Kasidit Toprasertpong ◽  
Kazuya Terabe ◽  
Shinichi Takagi ◽  
...  
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Charge Trapping ◽  
Dual Function ◽  
Light Illumination ◽  
Low Light ◽  
High Responsivity ◽  
Metal Dichalcogenides ◽  
High Resolution Images ◽  
Weak Light ◽  
Light Signals

Abstract2D Transition Metal Dichalcogenides hold a promising potential in future optoelectronic applications due to their high photoresponsivity and tunable band structure for broadband photodetection. In imaging applications, the detection of weak light signals is crucial for creating a better contrast between bright and dark pixels in order to achieve high resolution images. The photogating effect has been previously shown to offer high light sensitivities; however, the key features required to create this as a dominating photoresponse has yet to be discussed. Here, we report high responsivity and high photogain MoS2 phototransistors based on the dual function of HfO2 as a dielectric and charge trapping layer to enhance the photogating effect. As a result, these devices offered a very large responsivity of 1.1 × 106 A W−1, a photogain >109, and a detectivity of 5.6 × 1013 Jones under low light illumination. This work offers a CMOS compatible process and technique to develop highly photosensitive phototransistors for future low-powered imaging applications.

Novel p-p Heterojunctions Self-Powered Broadband Photodetectors with Ultrafast Speed and High Responsivity

2017 ◽  
Vol 27 (38) ◽  
pp. 1703166 ◽  
Author(s):  
Pingping Yu ◽  
Kai Hu ◽  
Hongyu Chen ◽  
Lingxia Zheng ◽  
Xiaosheng Fang
Keyword(s):  
High Responsivity ◽  
Self Powered

Heterostructured TiO2/MgO nanowire arrays for self-powered UV photodetectors

RSC Advances ◽  
2016 ◽  
Vol 6 (89) ◽  
pp. 85951-85957 ◽  
Author(s):  
Shiming Ni ◽  
Qingjiang Yu ◽  
Yuewu Huang ◽  
Jianan Wang ◽  
Lin Li ◽  
...  
Keyword(s):  
Fast Response ◽  
Nanowire Arrays ◽  
Uv Photodetectors ◽  
High Responsivity ◽  
Spectral Selectivity ◽  
Self Powered

A heterostructured TiO2/MgO NWAs based UVPD exhibits a high responsivity and fast response, together with excellent spectral selectivity.

Piezotronic Interface Engineering on ZnO/Au-Based Schottky Junction for Enhanced Photoresponse of a Flexible Self-Powered UV Detector

2014 ◽  
Vol 6 (16) ◽  
pp. 14116-14122 ◽  
Author(s):  
Shengnan Lu ◽  
Junjie Qi ◽  
Shuo Liu ◽  
Zheng Zhang ◽  
Zengze Wang ◽  
...  
Keyword(s):  
Schottky Junction ◽  
Interface Engineering ◽  
Uv Detector ◽  
Self Powered

Enhanced photoresponse of ZnO nanorods-based self-powered photodetector by piezotronic interface engineering

Nano Energy ◽  
2014 ◽  
Vol 9 ◽  
pp. 237-244 ◽  
Author(s):  
Zheng Zhang ◽  
Qingliang Liao ◽  
Yanhao Yu ◽  
Xudong Wang ◽  
Yue Zhang
Keyword(s):  
Zno Nanorods ◽  
Interface Engineering ◽  
Self Powered

Self-powered Weak Light LED-LED Communications

2019 ◽  
Author(s):  
Shuang Liang ◽  
Shangbin Li ◽  
Qiqi Pan ◽  
Zhengyuan Xu
Keyword(s):  
Weak Light ◽  
Self Powered

Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions

2016 ◽  
Vol 18 (2) ◽  
pp. 1131-1139 ◽  
Author(s):  
L. Z. Hao ◽  
W. Gao ◽  
Y. J. Liu ◽  
Y. M. Liu ◽  
Z. D. Han ◽  
...  
Keyword(s):  
Response Speed ◽  
High Responsivity ◽  
Self Powered

A self-powered photodetector based on a Pd-doped MoS2/Si heterojunction was fabricated. The device shows high detectivity, high responsivity, and an ultrafast response speed.

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