Room‐Temperature Diffusion‐Induced Extraction for Perovskite Nanocrystals with High Luminescence and Stability

Small Methods ◽  
2021 ◽  
pp. 2001292
Author(s):  
Fang Yao ◽  
Yongjie Liu ◽  
Yalun Xu ◽  
Jiali Peng ◽  
Pengbin Gui ◽  
...  
Keyword(s):  
Room Temperature ◽  
Perovskite Nanocrystals ◽  
Temperature Diffusion

High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

2018 ◽  
Author(s):  
Sotirios Christodoulou ◽  
Francesco Di Stasio ◽  
Santanu Pradhan ◽  
Inigo Ramiro ◽  
Yu Bi ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals

Room-temperature diffusion in Cu/Ag thin-film couples caused by anodic dissolution

1997 ◽  
Vol 28 (13) ◽  
pp. 843-850 ◽  
Author(s):  
Denny A. Jones ◽  
Alan F. Jankowski ◽  
Gail A. Davidson
Keyword(s):  
Thin Film ◽  
Anodic Dissolution ◽  
Room Temperature ◽  
Temperature Diffusion

Ultra-Shallow Doping of GaAs with Mg, Cr, Mn and B Using Plasma Stimulated Room-Temperature Diffusion

2020 ◽  
Vol 20 (3) ◽  
pp. 1878-1883
Author(s):  
Lei Li ◽  
Ruixiang Hou ◽  
Lili Zhang ◽  
Yihang Chen ◽  
L. Yao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Physical Mechanism ◽  
Plasma Sheath ◽  
Main Role ◽  
External Bias ◽  
Temperature Diffusion ◽  
Plasma Doping ◽  
Order Of Magnitude ◽  
Impurity Ion ◽  
First Time

It is demonstrated that Mg, Cr, Mn and B can be doped close to GaAs surface by plasma doping without external bias at room temperature (RT). The process only takes a few minutes, and impurity densities in the range of 1018–1021/cm3 can be achieved with doping depths about twenty nanometers. The experiment results are analyzed and the physical mechanism is tentatively explained as follows: during the doping process, impurity ion implantation under plasma sheath voltage takes place, simultaneously, plasma stimulates RT diffusion of impurity atom, which plays the main role in the doping process. The enhanced RT diffusion coefficients of Mg, Cr, Mn and B in GaAs are all in the order of magnitude of 10-15 cm2sec-1. This is reported for the first time among all kinds of plasma assisted doping methods.

Solubility‐Controlled Room‐Temperature Synthesis of Cesium Lead Halide Perovskite Nanocrystals

ChemNanoMat ◽  
2020 ◽  
Vol 6 (12) ◽  
pp. 1863-1869
Author(s):  
Artavazd Kirakosyan ◽  
Yeonho Kim ◽  
Moon Ryul Sihn ◽  
Min‐Gi Jeon ◽  
Jong‐Ryul Jeong ◽  
...  
Keyword(s):  
Room Temperature ◽  
Temperature Synthesis ◽  
Perovskite Nanocrystals ◽  
Room Temperature Synthesis ◽  
Halide Perovskite ◽  
Lead Halide

Low energy boron implantation in silicon and room temperature diffusion

1998 ◽  
Vol 139 (1-4) ◽  
pp. 98-107 ◽  
Author(s):  
E.J.H Collart ◽  
K Weemers ◽  
N.E.B Cowern ◽  
J Politiek ◽  
P.H.L Bancken ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Energy ◽  
Temperature Diffusion ◽  
Boron Implantation
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