Anomalous Room Temperature Diffusion of Ion-Injected Ni in Zn Targets

1974 ◽  
pp. 295-306 ◽  
Author(s):  
H. J. Smith ◽  
G. N. Van Wyk
Keyword(s):  
Room Temperature ◽  
Temperature Diffusion

Room-temperature diffusion in Cu/Ag thin-film couples caused by anodic dissolution

1997 ◽  
Vol 28 (13) ◽  
pp. 843-850 ◽  
Author(s):  
Denny A. Jones ◽  
Alan F. Jankowski ◽  
Gail A. Davidson
Keyword(s):  
Thin Film ◽  
Anodic Dissolution ◽  
Room Temperature ◽  
Temperature Diffusion

Ultra-Shallow Doping of GaAs with Mg, Cr, Mn and B Using Plasma Stimulated Room-Temperature Diffusion

2020 ◽  
Vol 20 (3) ◽  
pp. 1878-1883
Author(s):  
Lei Li ◽  
Ruixiang Hou ◽  
Lili Zhang ◽  
Yihang Chen ◽  
L. Yao ◽  
...  
Keyword(s):  
Room Temperature ◽  
Physical Mechanism ◽  
Plasma Sheath ◽  
Main Role ◽  
External Bias ◽  
Temperature Diffusion ◽  
Plasma Doping ◽  
Order Of Magnitude ◽  
Impurity Ion ◽  
First Time

It is demonstrated that Mg, Cr, Mn and B can be doped close to GaAs surface by plasma doping without external bias at room temperature (RT). The process only takes a few minutes, and impurity densities in the range of 1018–1021/cm3 can be achieved with doping depths about twenty nanometers. The experiment results are analyzed and the physical mechanism is tentatively explained as follows: during the doping process, impurity ion implantation under plasma sheath voltage takes place, simultaneously, plasma stimulates RT diffusion of impurity atom, which plays the main role in the doping process. The enhanced RT diffusion coefficients of Mg, Cr, Mn and B in GaAs are all in the order of magnitude of 10-15 cm2sec-1. This is reported for the first time among all kinds of plasma assisted doping methods.

Low energy boron implantation in silicon and room temperature diffusion

1998 ◽  
Vol 139 (1-4) ◽  
pp. 98-107 ◽  
Author(s):  
E.J.H Collart ◽  
K Weemers ◽  
N.E.B Cowern ◽  
J Politiek ◽  
P.H.L Bancken ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Energy ◽  
Temperature Diffusion ◽  
Boron Implantation

Room-temperature diffusion in Cu/Ag thin-film couples caused by anodic dissolution

1997 ◽  
Vol 28 (3) ◽  
pp. 843-850 ◽  
Author(s):  
Denny A. Jones ◽  
Alan F. Jankowski ◽  
Gail A. Davidson
Keyword(s):  
Thin Film ◽  
Anodic Dissolution ◽  
Room Temperature ◽  
Temperature Diffusion

Low-Temperature Grain Boundary Diffusion Data Measured from Historical Artifacts

2004 ◽  
Vol 852 ◽  
Author(s):  
R.J. Kremer ◽  
M.A. Dayananda ◽  
A.H. King
Keyword(s):  
Low Temperature ◽  
Grain Boundary ◽  
Room Temperature ◽  
Boundary Diffusion ◽  
Diffusion Processes ◽  
Grain Boundary Diffusion ◽  
Accelerated Tests ◽  
Temperature Diffusion ◽  
Diffusion Profiles

ABSTRACTDiffusion processes in typical metals are slow at room temperature but there are many applications for which very long-term use is envisaged and stability needs to be assured over a timescale of 10, 000 years, where even slow processes can be important. It is common to perform accelerated tests at higher temperatures and extrapolate the necessary information from the measurements so obtained. We have tested the validity of this type of extrapolation for room-temperature, grain boundary diffusion in the copper-silver system, by measuring low-temperature diffusion profiles in antique samples of Sheffield plate.

Room-temperature diffusion coefficients for oxygen and water in UO2 matrices: a SIMS study

2012 ◽  
Vol 45 (1) ◽  
pp. 360-363 ◽  
Author(s):  
I. Marchetti ◽  
P. Carbol ◽  
J. Himbert ◽  
F. Belloni ◽  
T. Fanghänel
Keyword(s):  
Diffusion Coefficients ◽  
Room Temperature ◽  
Temperature Diffusion

Room temperature diffusion of Cu in vanadium pentoxide thin films

2002 ◽  
Vol 35 (11) ◽  
pp. 1176-1182 ◽  
Author(s):  
Azam Iraji-zad ◽  
Mohammad M Ahadian ◽  
Zahra Vashaei
Keyword(s):  
Thin Films ◽  
Vanadium Pentoxide ◽  
Room Temperature ◽  
Temperature Diffusion

Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

1996 ◽  
Vol 438 ◽  
Author(s):  
F. Priolo ◽  
V. Privitera ◽  
S. Coffa ◽  
S. Libertino
Keyword(s):  
Diffusion Coefficient ◽  
Long Range ◽  
Point Defects ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Temperature Diffusion ◽  
Range Migration ◽  
Limited Diffusion ◽  
Vacancy Type Defect

AbstractOur recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (∼ 10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6×10−11-cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm 2/s. These data are presented and their implications discussed.

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