Calculated Electronic Structures and Schottky Barrier Heights of (111) NiSi2/Si A- and B-Type Interfaces

1989 ◽  
pp. 215-234 ◽  
Author(s):  
G. P. Das ◽  
P. Blöchl ◽  
N. E. Christensen ◽  
O. K. Andersen
Keyword(s):  
Schottky Barrier ◽  
Electronic Structures ◽  
Barrier Heights

Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights

1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights

scholarly journals Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

2005 ◽  
Vol 86 (6) ◽  
pp. 062108 ◽  
Author(s):  
Q. T. Zhao ◽  
U. Breuer ◽  
E. Rije ◽  
St. Lenk ◽  
S. Mantl
Keyword(s):  
Schottky Barrier ◽  
Sulfur Segregation ◽  
Barrier Heights

Schottky barrier heights of epitaxial Ni–silicides on Si(111)

1986 ◽  
Vol 4 (3) ◽  
pp. 855-859 ◽  
Author(s):  
M. Liehr ◽  
P. E. Schmid ◽  
F. K. LeGoues ◽  
P. S. Ho
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Ni Silicides

scholarly journals Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

2021 ◽  
Vol 129 (17) ◽  
pp. 175304
Author(s):  
Jiaqi Chen ◽  
Zhaofu Zhang ◽  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Free Metal

ANNEALING EFFECTS ON ELECTRIC CONTACTS BETWEEN CARBON NANOTUBES AND ELECTRODES

2006 ◽  
Vol 05 (04n05) ◽  
pp. 401-406 ◽  
Author(s):  
JINGQI LI ◽  
QING ZHANG ◽  
MARY B. CHAN-PARK ◽  
YEHAI YAN
Keyword(s):  
Carbon Nanotubes ◽  
Contact Resistance ◽  
Schottky Barrier ◽  
Isopropyl Alcohol ◽  
Single Wall Carbon Nanotubes ◽  
Total Resistance ◽  
Ambient Environment ◽  
Barrier Heights ◽  
Electric Contacts ◽  
Annealing Effects

Single wall carbon nanotubes suspended in isopropyl alcohol are placed between two Au electrodes by ac dielectrophoresis method. Total resistance including the contact resistance and intrinsic tube resistance is found to decrease from 105–106 Ω for as-prepared samples to 104 Ω after annealing at 300°C in ambient environment. Measured I–V curves and Schottky barrier heights suggest that the electric contacts are changed from Schottky to Ohmic characteristics after annealing. These results demonstrate that annealing in ambient environment is a simple and efficient way to decrease the contact resistance.

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