Effect of Exchange Field on the Anomalous Behaviour of 4F State of Ce in Ce1-xGdxRh3B2

Author(s):  
A. K. Grover ◽  
S. K. Dhar

1971 ◽  
Vol 32 (C1) ◽  
pp. C1-1028-C1-1030 ◽  
Author(s):  
S. K. MALIK ◽  
R. VIJAYARAGHAVAN


2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.



Author(s):  
Yanfei Wu ◽  
Qirui Cui ◽  
Mengyuan Zhu ◽  
Xinjie Liu ◽  
Yi Wang ◽  
...  


1981 ◽  
Vol 25 (2) ◽  
pp. 152-159 ◽  
Author(s):  
Jan Šílený ◽  
V. Červený




1975 ◽  
Vol 5 (12) ◽  
pp. 2379-2387 ◽  
Author(s):  
C Rettori ◽  
R Levin ◽  
D Davidov
Keyword(s):  


1984 ◽  
Vol 26 (2) ◽  
pp. 113-118 ◽  
Author(s):  
Bradley Dodd ◽  
Robert M. Caddell




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