Metal/Oxide Interfaces: Chemistry, Wetting, Adhesion, and Oxygen Activity

1998 ◽  
pp. 349-358 ◽  
Author(s):  
Dominique Chatain ◽  
Véronique Ghetta ◽  
Jacques Fouletier
1999 ◽  
Vol 586 ◽  
Author(s):  
M. Backhaus-Ricoult

ABSTRACTTransition metal-oxide interfaces suffer within their thermodynamic stability range Gibbs' adsorption and show important changes in chemical composition with oxygen activity. As a consequence, specific free interfacial energy and adhesion energy also vary with oxygen activity. Adhesion at a given non-reactive transition metal-oxide interface can then be optimised by establishing the proper oxygen activity during processing or by a post-treatment at the interface.In the present work, the approach of Gibbs' adsorption is extended to crystalline, anisotropic (special) transition metal-oxide interfaces. It is demonstrated that interfacial energy varies with oxygen activity. The variation in energy is studied for different adsorption energies, temperatures and interfacial planes.


1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-781-C1-787
Author(s):  
B. BONVALOT ◽  
G. DHALENNE ◽  
F. MILLOT ◽  
A. REVCOLEVSCHI

1995 ◽  
Vol 02 (01) ◽  
pp. 109-126 ◽  
Author(s):  
ROBERT J. LAD

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO (100), TiO 2(110), and [Formula: see text] surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.


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