STRUCTURE OF METAL-OXIDE INTERFACES

1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi
Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.


1988 ◽  
Vol 122 ◽  
Author(s):  
H. F. Fischmeister ◽  
W. Mader ◽  
B. Gibbesch ◽  
G. Elssner

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-781-C1-787
Author(s):  
B. BONVALOT ◽  
G. DHALENNE ◽  
F. MILLOT ◽  
A. REVCOLEVSCHI

2019 ◽  
pp. 223-262
Author(s):  
Bjorn Mysen ◽  
Pascal Richet

Vacuum ◽  
2008 ◽  
Vol 83 (3) ◽  
pp. 606-609 ◽  
Author(s):  
Kazuhiro Kato ◽  
Hideo Omoto ◽  
Atsushi Takamatsu

1995 ◽  
Vol 02 (01) ◽  
pp. 109-126 ◽  
Author(s):  
ROBERT J. LAD

This article reviews aspects of the electronic, chemical, and structural properties of metal/oxide and oxide/oxide interfaces which are formed via ultrathin film growth on oxide single-crystal surfaces. The interactions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide substrates and limitations and difficulties in studying these ceramic systems are discussed. The remainder of the article presents experimental observations for several systems involving both metal and oxide ultrathin film growth on stoichiometric NiO (100), TiO 2(110), and [Formula: see text] surfaces including a discussion of interdiffusion, chemical and electronic interactions, thermal stability, and interfacial impurity effects.


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