Bulk and Interface Effects in Crystal Growth by the Moving-Solvent Method

1979 ◽  
pp. 146-151
Author(s):  
V. N. Lozovskii ◽  
G. S. Konstantinova ◽  
V. Yu. Gershanov ◽  
E. I. Kireev ◽  
V. S. Zurnadzhyan
Keyword(s):  
Crystal Growth ◽  
Solvent Method ◽  
Interface Effects

Basic Trends in Crystal Growth by the Moving-Solvent Method

1975 ◽  
pp. 127-131
Author(s):  
V. N. Lozovskii ◽  
V. P. Popov ◽  
G. S. Konstantinova ◽  
V. A. Ivkov
Keyword(s):  
Crystal Growth ◽  
Solvent Method

Crystal Growth of GaAs from Ga by a Traveling Solvent Method

1963 ◽  
Vol 34 (9) ◽  
pp. 2885-2892 ◽  
Author(s):  
A. I. Mlavsky ◽  
Martin Weinstein
Keyword(s):  
Crystal Growth ◽  
Solvent Method

Single crystal growth of Ge[sub 1−x]Si[sub x] alloys using the traveling solvent method

2004 ◽  
Vol 22 (3) ◽  
pp. 962 ◽  
Author(s):  
D. Labrie ◽  
A. E. George ◽  
M. Jamieson ◽  
S. Obruchkov ◽  
J. P. Healey ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Solvent Method

scholarly journals Three-dimensional modeling of Ge₁₋xSix by the traveling solvent method to study the effect of gravity orientations under different rotational speed

2021 ◽  
Author(s):  
Mahwish Sohail
Keyword(s):  
Crystal Growth ◽  
Rotational Speed ◽  
Stokes Equations ◽  
Three Dimensional ◽  
Axial Rotation ◽  
Considerable Effect ◽  
Computational Time ◽  
Solvent Method ◽  
Continuity Equations ◽  
Element Technique

This thesis presents a 3-D numerical simulation study for the growth of germanium-silicon (Ge₁₋xSix) under different gravity orientation and axial rotation. The process use for crystal growth of Ge₁₋xSix is traveling solvent method known as TSM. The TSM process has been tested on many alloys producing uniform and uncontaminated crystal products. In this model a mesh sensitivity analysis his been carried out to find an optimum mesh which provides accurate results while saving computational time. The full Navier-Stokes equations together with the energy, mass transport and continuity equations were solved numerically using the finite element technique. The application of gravity orientation and crucible rotation to the traveling solvent method is an attempt to control the buoyancy induced convection throughout the melt and to suppress the three-dimensional characteristics of unsteady heat flow. These different speeds of rotation were shown to have a considerable effect on the buoyancy induced flow. The solute distribution throughout the melt was also affected substantially. Taking these two factors into account plays a crucial role in the crystal growth process. The speed of rotation showed to have a significant effect on the intensity of the convective flow in the melt and an optimal rotational speed was encountered.

scholarly journals Three-dimensional modeling of Ge₁₋xSix by the traveling solvent method to study the effect of gravity orientations under different rotational speed

2021 ◽  
Author(s):  
Mahwish Sohail
Keyword(s):  
Crystal Growth ◽  
Rotational Speed ◽  
Stokes Equations ◽  
Three Dimensional ◽  
Axial Rotation ◽  
Considerable Effect ◽  
Computational Time ◽  
Solvent Method ◽  
Continuity Equations ◽  
Element Technique

This thesis presents a 3-D numerical simulation study for the growth of germanium-silicon (Ge₁₋xSix) under different gravity orientation and axial rotation. The process use for crystal growth of Ge₁₋xSix is traveling solvent method known as TSM. The TSM process has been tested on many alloys producing uniform and uncontaminated crystal products. In this model a mesh sensitivity analysis his been carried out to find an optimum mesh which provides accurate results while saving computational time. The full Navier-Stokes equations together with the energy, mass transport and continuity equations were solved numerically using the finite element technique. The application of gravity orientation and crucible rotation to the traveling solvent method is an attempt to control the buoyancy induced convection throughout the melt and to suppress the three-dimensional characteristics of unsteady heat flow. These different speeds of rotation were shown to have a considerable effect on the buoyancy induced flow. The solute distribution throughout the melt was also affected substantially. Taking these two factors into account plays a crucial role in the crystal growth process. The speed of rotation showed to have a significant effect on the intensity of the convective flow in the melt and an optimal rotational speed was encountered.

Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method

2011 ◽  
Vol 679-680 ◽  
pp. 36-39 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Nobuyoshi Yashiro ◽  
Koji Moriguchi ◽  
Nobuhiro Okada
Keyword(s):  
Crystal Growth ◽  
Liquid Phase ◽  
Epitaxial Growth ◽  
Solvent Method

We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.

THE TRAVELLING SOLVENT METHOD OF CRYSTAL GROWTH

1963 ◽  
Author(s):  
L. B. Griffiths ◽  
M. A. Wright ◽  
A. I. Mlavsky
Keyword(s):  
Crystal Growth ◽  
Solvent Method
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