Microchannel reactors for kinetic measurement: Influence of diffusion and dispersion on experimental accuracy

2001 ◽  
pp. 131-140 ◽  
Author(s):  
J. M. Commenge ◽  
L. Falk ◽  
J. P. Corriou ◽  
M. Matlosz
2021 ◽  
Vol 245 ◽  
pp. 116838
Author(s):  
Wenxing Sun ◽  
Xunli Zhang ◽  
Chaoqun Yao ◽  
Qingqiang Wang ◽  
Nan Jin ◽  
...  

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12531-12531
Author(s):  
Junjie Chen ◽  
Xuhui Gao ◽  
Longfei Yan ◽  
Deguang Xu

Retraction of ‘Computational fluid dynamics modeling of the millisecond methane steam reforming in microchannel reactors for hydrogen production’ by Junjie Chen et al., RSC Adv., 2018, 8, 25183–25200, DOI: 10.1039/C8RA04440F.


1966 ◽  
Vol 44 (5) ◽  
pp. 987-994 ◽  
Author(s):  
R. E. Barrington ◽  
Luise Herzberg

Ionograms produced by the Alouette I topside sounder frequently show well-developed series of cyclotron harmonics. Their frequencies have been determined from A (amplitude) scans with an accuracy of ~0.02 Mc/s for the sweep range of 1 to 6 Mc/s. In all cases examined, the frequencies of all of the members of the harmonic series are, within the experimental accuracy, integral multiples of the cyclotron frequency derived from the best present estimates of the earth's magnetic field strength at the satellite height. This result is discussed in the light of recent laboratory results and theoretical studies.


Author(s):  
Luis F. Bobadilla ◽  
Lola Azancot ◽  
José A. Odriozola

2015 ◽  
Vol 242 ◽  
pp. 434-439 ◽  
Author(s):  
Vasilii E. Gusakov

Within the framework of the density functional theory, the method was developed to calculate the band gap of semiconductors. We have evaluated the band gap for a number of monoatomic and diatomic semiconductors (Sn, Ge, Si, SiC, GaN, C, BN, AlN). The method gives the band gap of almost experimental accuracy. An important point is the fact that the developed method can be used to calculate both localized states (energy deep levels of defects in crystal), and electronic properties of nanostructures.


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