Strongly localized states and giant optical absorption induced by multiple flat-bands in AA-stacked multilayer armchair graphenenanoribbons

We propose an AA-stacked multilayer graphene nanoribbon with two symmetrical armchair edges as a multiple flat-band (FB) material. Using the tight-binding Hamiltonian and Green’s function method, we find that the FBs are complete and merged into many dispersive bands. The FBs cause multiple strongly localized states (SLSs) at the sites of the odd lines in every sublayer and a giant optical absorption (GOA) at energy point 2t, where t is the electronic intralayer hopping energy between two nearest-neighbor sites. By driving an electric field perpendicular to the ribbon plane, the bandgaps of the FBs are tunable. Accordingly, the positions of the SLSs in the energy regime can be shifted. However, the position of the GOA is robust against such field, but its strength exhibits a collapse behavior with a fixed quantization step. On the contrary, by driving an electric field parallel to the ribbon plane, the completeness of FBs is destroyed. Resultantly, the SLSs and GOA are suppressed and even quenched. Therefore, such ribbons may be excellent candidates for the design of the controllable information-transmission and optical-electric nanodevices.

Structural, FTIR, Optical and Dielectric Properties of Zn1-xAlxO Ceramics For Advanced Applications

We report here the structural, FTIR, optical and dielectric properties of Zn1−xAlxO with x = 00.00 < x ≤ 0.20)). The wurtzite structure is conformed to all samples and the lattice constants, crystallite diameter, porosity and average crystalline size are generally decreased. The residual stress is compressive for pure samples, but it is changed to tensile for the doped samples. Interestingly, Debye temperature and elastic modulus are increased as x increases to 0.10, followed by a decrease at x = 0.20. Two different energy gaps Egh and Egl are apparent for each sample, corresponding of two transition absorption peaks. Interestingly, the ΔE = (Egh – Egl) ~ 0.60 for all samples. Further, the residual dielectric constant is decreased by increasing x to 0.10, followed by a sharp increase at x = 0.20 while the opposite behavior for (N/m*). The dielectric constant ε′ is slightly increased as x increases to 0.025, followed by a sharp increase as x increases to 0.20, as well as the ac conductivity σ/. The conduction is electronic for x ≤ 0.025 samples, but it is changed to hole with an increase of x to 0.20. The binding energy Wm was decreased as x increases to 0.20, but there is no exact trend against x for the behaviors of minimum hopping distance Rmin and density of localized states N. In addition, the density of states at Fermi level N (EF) has an optimum value at 195 KHz for all samples. The F-factor for solar cell design is increased as x increases to 0.10, but it is almost constant at x = 0.20. The Cole-Cole plot is a straight line for x = 0.00, a semicircle arc for x = 0.025 and a complete semicircle for x ≥ 0.05. The impedance resistance of grain Z\(g) and grain boundaries Z\(gb) are gradually decreased by increasing x to 0.20. These outcomes indicate that the addition of Al to ZnO shifts the mechanical, optical, and dielectric medium to higher values, which is strongly recommended for the design of optoelectronic and solar cell instruments.

Nonlinear Thermopower Behaviour of N-Type Carbon Nanofibres and Their Melt Mixed Polypropylene Composites

The temperature dependent electrical conductivity σ (T) and thermopower (Seebeck coefficient) S (T) from 303.15 K (30 °C) to 373.15 K (100 °C) of an as-received commercial n-type vapour grown carbon nanofibre (CNF) powder and its melt-mixed polypropylene (PP) composite with 5 wt.% of CNFs have been analysed. At 30 °C, the σ and S of the CNF powder are ~136 S m−1 and −5.1 μV K−1, respectively, whereas its PP/CNF composite showed lower conductivities and less negative S-values of ~15 S m−1 and −3.4 μV K−1, respectively. The σ (T) of both samples presents a dσ/dT < 0 character described by the 3D variable range hopping (VRH) model. In contrast, their S (T) shows a dS/dT > 0 character, also observed in some doped multiwall carbon nanotube (MWCNT) mats with nonlinear thermopower behaviour, and explained here from the contribution of impurities in the CNF structure such as oxygen and sulphur, which cause sharply varying and localized states at approximately 0.09 eV above their Fermi energy level (EF).

Spectrum of localized states in fermionic chains with defect and adiabatic charge pumping

In this paper, we study the localized states of a generic quadratic fermionic chain with finite-range couplings and an inhomogeneity in the hopping (defect) that breaks translational invariance. When the hopping of the defect vanishes, which represents an open chain, we obtain a simple bulk-edge correspondence: the zero-energy modes localized at the ends of the chain are related to the roots of a polynomial determined by the couplings of the Hamiltonian of the bulk. From this result, we define an index that characterizes the different topological phases of the system and can be easily computed by counting the roots of the polynomial. As the defect is turned on and varied adiabatically, the zero-energy modes may cross the energy gap and connect the valence and conduction bands. We analyze the robustness of the connection between bands against perturbations of the Hamiltonian. The pumping of states from one band to the other allows the creation of particle–hole pairs in the bulk. An important ingredient for our analysis is the transformation of the Hamiltonian under the standard discrete symmetries, C, P, T, as well as a fourth one, peculiar to our system, that is related to the existence of a gap and localized states.

First-Principles Density Functional Theory Study of Modified Germanene-Based Electrode Materials

Germanene, with a wrinkled atomic layer structure and high specific surface area, showed high potential as an electrode material for supercapacitors. According to the first-principles calculation based on Density Functional Theory, the quantum capacitance of germanene could be significantly improved by introducing doping/co-doping, vacancy defects and multilayered structures. The quantum capacitance obtained enhancement as a result of the generation of localized states near the Dirac point and/or the movement of the Fermi level induced by doping and/or defects. In addition, it was found that the quantum capacitance enhanced monotonically with the increase of the defect concentration.

Towards a Theory of Quantum Gravity from Neural Networks

Neural network is a dynamical system described by two different types of degrees of freedom: fast-changing non-trainable variables (e.g., state of neurons) and slow-changing trainable variables (e.g., weights and biases). We show that the non-equilibrium dynamics of trainable variables can be described by the Madelung equations, if the number of neurons is fixed, and by the Schrodinger equation, if the learning system is capable of adjusting its own parameters such as the number of neurons, step size and mini-batch size. We argue that the Lorentz symmetries and curved space-time can emerge from the interplay between stochastic entropy production and entropy destruction due to learning. We show that the non-equilibrium dynamics of non-trainable variables can be described by the geodesic equation (in the emergent space-time) for localized states of neurons, and by the Einstein equations (with cosmological constant) for the entire network. We conclude that the quantum description of trainable variables and the gravitational description of non-trainable variables are dual in the sense that they provide alternative macroscopic descriptions of the same learning system, defined microscopically as a neural network.

Modulation of persistent current in graphene quantum rings

We investigate the effect of long-range impurity potentials on the persistent current of graphene quantum rings in the presence of an uniform perpendicular magnetic field. The impurity potentials are modeled as finite regions of the ring with a definite length. We show that, due to the relativistic and massless character of the charge carriers in graphene, the effect of such non-uniform potentials on the energy spectrum and on the persistent current of the rings can be reliably modeled by assuming a non-perturbed ring and including an additional phase due to the interaction of the charge carriers with the potential. In addition, the results show the presence of localized states in the impurity regions. Moreover, we show that for the case of a potential created by a p-n-p junction, the persistent current can be modulated by controlling the voltage at the junction.

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAsyP1−y buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended wavelength InGaAs layer were investigated. The surface showed ordered crosshatch morphology and a low roughness of 1.38 nm. Full relaxation, steep interface and less than one threading dislocation in the InGaAs layer were demonstrated by taking advantage of the strain compensation mechanism. Room temperature photoluminescence (PL) exhibited remarkable intensity attributed to the lower density of deep non-radiative centers. The emission peak energy with varied temperatures was in good agreement with Varshni’s empirical equation, implying high crystal quality without inhomogeneity-induced localized states. Therefore, our work shows that compositionally undulating step-graded InAsP buffers with a thinner bottom modulation layer, grown by molecular beam epitaxy, is an effective approach to prepare InGaAs materials with wavelengths longer than 2.0 μm and to break the lattice limitation on the materials with even larger mismatch.