Surface and Interface Waves in a Sandwich Plate with Interface Soft Layers

Author(s):  
S. K. Datta ◽  
A. H. Shah ◽  
T. Chakraborty ◽  
R. L. Bratton
1971 ◽  
Vol 61 (5) ◽  
pp. 1119-1152
Author(s):  
Mario Ottaviani

abstract This paper deals with elastic-wave propagation in two evenly-welded quarter-spaces. A compressional line source can be located at any point within either medium. The numerical solutions to this problem have been obtained by using the finite difference method. A computer program has been written to obtain synthetic seismograms of the horizontal and vertical displacements at all nodes of the superimposed grid, for the following cases: (a) elastic-wave propagation in a quarter-space, and (b) elastic-wave propagation in two quarter-spaces. Reflected, converted, transmitted, and diffracted phases are identified and interpreted. Surface and interface waves, originated at the corner by diffraction of the source pulse, are investigated as a function of the rigidity contrast and the velocity contrast between the two media and of the position of the source. Two-dimensional seismic modeling techniques have been used to provide a qualitative experimental verification of the numerical results.


2016 ◽  
Vol 22 (5) ◽  
Author(s):  
Evaldas Sapeliauskas ◽  
Dovydas Barauskas ◽  
Gailius Vanagas ◽  
Darius Viržonis

1966 ◽  
Vol 37 (1) ◽  
pp. 461-462 ◽  
Author(s):  
C. Davis ◽  
T. Tamir

Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.


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