Laser Micromachining of Thin Films

1998 ◽  
pp. 34-99
Author(s):  
Simeon M. Metev ◽  
Vadim P. Veiko
Keyword(s):  
Thin Films ◽  
Laser Micromachining

Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

1999 ◽  
Vol 595 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

AbstractExcimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

Diagnostic technique for laser micromachining of multi-layer thin films

2005 ◽  
Vol 45 (4-5) ◽  
pp. 583-589 ◽  
Author(s):  
Guangyu Liu ◽  
Dario J. Toncich ◽  
Erol C. Harvey ◽  
Fenge Yuan
Keyword(s):  
Thin Films ◽  
Diagnostic Technique ◽  
Laser Micromachining

Femtosecond Laser Micromachining of Metal Thin Films

2019 ◽  
Vol 11 ◽  
pp. 441-445 ◽  
Author(s):  
Ruslan Chkalov ◽  
Kirill Khorkov ◽  
Dmitriy Kochuev
Keyword(s):  
Thin Films ◽  
Femtosecond Laser ◽  
Laser Micromachining ◽  
Metal Thin Films ◽  
Femtosecond Laser Micromachining

scholarly journals Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

2000 ◽  
Vol 5 (S1) ◽  
pp. 852-858 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

Laser micromachining of thin films for optoelectronic devices and packages

2003 ◽  
Author(s):  
David F. Moore ◽  
John A. Williams ◽  
Matthew A. Hopcroft ◽  
Billy Boyle ◽  
Johnny H. He ◽  
...  
Keyword(s):  
Thin Films ◽  
Optoelectronic Devices ◽  
Laser Micromachining
Sign in / Sign up

Export Citation Format

Share Document