Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

1999 ◽  
Vol 595 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

AbstractExcimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

scholarly journals Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

2000 ◽  
Vol 5 (S1) ◽  
pp. 852-858 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

Excimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

Preparation of Ti:sapphire thin films on sapphire substrates by XeCl excimer laser ablation

1996 ◽  
Author(s):  
Peter A. Atanasov ◽  
Rumen I. Tomov ◽  
Anna O. Dikovska ◽  
Zdravka I. Aneva ◽  
Vasilka Tsaneva ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Xecl Excimer Laser

scholarly journals Preparation and Properties of Superconducting thin Films by Excimer Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Michael E. Geusic ◽  
Alan F. Stewart ◽  
Larry R. Pederson ◽  
William J. Weber ◽  
Kenneth R. Marken ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Substrate Surface ◽  
Xrd Analysis ◽  
Zero Field ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Excimer Laser Ablation

ABSTRACTExcimer laser ablation with an in situ heat treatment was used to prepare high quality superconducting YBa2Cu3O7−x thin films on (100)-SrTiO3 and (100)-LaAlO3 substrates. A pulsed excimer laser (XeCl; 308 nm) was used to ablate a rotating, bulk YBa2Cu3O7−x target at a laser energy density of 2–3 J/cm2. Based on four-probe dc resistance measurements, the films exhibited superconducting transition temperatures (Tc, midpoint) of 88 and 87K with 2K (90–10%) transition widths for SrTiO3 and LaAlO3, respectively. Transport critical current densities (Jc) measured at 77K were 2 × 106 and 1 × 106 A/cm2 in zero field for SrTiO3 and LaAlO3, respectively. X-ray diffraction (XRD) analysis showed the films to be highly oriented, with the c-axis perpendicular to the substrate surface.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films

2010 ◽  
Vol 645-648 ◽  
pp. 459-462 ◽  
Author(s):  
Oliver Erlenbach ◽  
Gonzalo Gálvez ◽  
Jorge Andres Guerra ◽  
Francisco De Zela ◽  
Roland Weingärtner ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Emission Intensity ◽  
Thermal Activation ◽  
Wide Bandgap ◽  
Isochronal Annealing ◽  
Strong Increase ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Thin Films

We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.

Growth and study of SrBi2 (Ta, Nb)2 O9 thin films by pulsed excimer laser ablation

2000 ◽  
Vol 114 (11) ◽  
pp. 585-588 ◽  
Author(s):  
S Bhattacharyya ◽  
S.S.N Bharadwaja ◽  
S.B Krupanidhi
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation

Wide Bandgap Semiconductor Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Device ◽  
Experimental Demonstration ◽  
Power Devices ◽  
Process Technology ◽  
Power Semiconductor ◽  
Wide Bandgap Semiconductor ◽  
Simulated Performance ◽  
Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

Excimer laser ablation of aluminum: influence of spot size on ablation rate

Laser Physics ◽  
2016 ◽  
Vol 26 (11) ◽  
pp. 116102 ◽  
Author(s):  
M E Shaheen ◽  
J E Gagnon ◽  
B J Fryer
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Spot Size ◽  
Excimer Laser Ablation
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