Strain Optimization to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics by Use of First-Principles Calculations

Simulation of Semiconductor Processes and Devices 2004 ◽

10.1007/978-3-7091-0624-2_18 ◽

2004 ◽

pp. 73-76

Author(s):

Yoshiharu Kanegae ◽

Hiroshi Moriya ◽

Tomio Iwasaki

Keyword(s):

Leakage Current ◽

First Principles ◽

Gate Dielectrics ◽

Silicon Oxynitride ◽

First Principles Calculations ◽

Gate Leakage Current ◽

Mos Transistors ◽

Gate Leakage ◽

Strain Optimization

First-Principles-Calculation Method for Optimizing Strain to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics

JSME International Journal Series A ◽

10.1299/jsmea.48.14 ◽

2005 ◽

Vol 48 (1) ◽

pp. 14-19 ◽

Cited By ~ 1

Author(s):

Yoshiharu KANEGAE ◽

Hiroshi MORIYA ◽

Tomio IWASAKI

Keyword(s):

Leakage Current ◽

First Principles ◽

Calculation Method ◽

Gate Dielectrics ◽

Silicon Oxynitride ◽

First Principles Calculation ◽

Gate Leakage Current ◽

Mos Transistors ◽

Gate Leakage

First-Principles Analysis of the Effect of Strain on Gate Leakage Current Characteristics in MOS Transistors

The Proceedings of Ibaraki District Conference ◽

10.1299/jsmeibaraki.2004.11 ◽

2004 ◽

Vol 2004 (0) ◽

pp. 11-12

Author(s):

Yoshiharu Kanegae ◽

Hiroshi Moriya ◽

Tomio Iwasaki

Keyword(s):

Leakage Current ◽

First Principles ◽

Gate Leakage Current ◽

Mos Transistors ◽

Gate Leakage ◽

Current Characteristics

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Applied Physics Letters ◽

10.1063/1.1899232 ◽

2005 ◽

Vol 86 (14) ◽

pp. 143507 ◽

Cited By ~ 120

Author(s):

N. Umezawa ◽

K. Shiraishi ◽

T. Ohno ◽

H. Watanabe ◽

T. Chikyow ◽

...

Keyword(s):

Leakage Current ◽

First Principles ◽

Gate Leakage Current ◽

Gate Leakage ◽

High K ◽

Intrinsic Effect

Reduction of Gate Leakage Current of Ultra thin Silicon Oxynitride via RTP-Induced Phonon-Energy-Coupling Enhancement

2006 64th Device Research Conference ◽

10.1109/drc.2006.305127 ◽

2006 ◽

Author(s):

Pang-leen Ong ◽

Chandan Samantaray ◽

Zhi Chen

Keyword(s):

Leakage Current ◽

Energy Coupling ◽

Silicon Oxynitride ◽

Phonon Energy ◽

Gate Leakage Current ◽

Gate Leakage ◽

Thin Silicon

Off-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques

Proceedings 1995 IEEE Hong Kong Electron Devices Meeting HKDEM-95 ◽

10.1109/hkedm.1995.520637 ◽

2002 ◽

Author(s):

Zeng Xu ◽

P.T. Lai ◽

W.T. Ng

Keyword(s):

Leakage Current ◽

Gate Dielectrics ◽

Gate Leakage Current ◽

Gate Leakage

First-principles calculations of the effect of incorporating Hf atoms in AlON gate dielectrics of wide-bandgap-semiconductor power devices on the hole leakage current

10.7567/ssdm.2018.ps-4-20 ◽

2018 ◽

Author(s):

T. Nagura ◽

K. Chokawa ◽

M. Araidai ◽

T. Hosoi ◽

H. Watanabe ◽

...

Keyword(s):

Leakage Current ◽

First Principles ◽

Gate Dielectrics ◽

Wide Bandgap ◽

First Principles Calculations ◽

Power Devices ◽

Wide Bandgap Semiconductor

First-Principles Calculations on Strain Dependence of Leakage Current in MOS Transistors with SiON Gate Insulators

Proceedings of the 1992 Annual Meeting of JSME/MMD ◽

10.1299/jsmezairiki.2003.0_573 ◽

2003 ◽

Vol 2003 (0) ◽

pp. 573-574

Author(s):

Yoshiharu Kanegae ◽

Hiroshi Moriya ◽

Tomio Iwasaki

Keyword(s):

Leakage Current ◽

First Principles ◽

First Principles Calculations ◽

Mos Transistors ◽

Strain Dependence ◽

Gate Insulators

Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with highk gate dielectrics

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems ◽

10.1109/electro.2009.5441181 ◽

2009 ◽

Author(s):

S. Goswami ◽

A. Biswas

Keyword(s):

Numerical Simulation ◽

Leakage Current ◽

Gate Dielectrics ◽

Gate Leakage Current ◽

Gate Leakage ◽

Strained Si

Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.128.885 ◽

2008 ◽

Vol 128 (6) ◽

pp. 885-889

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

Ion Implanted

Fast Gate Leakage Current Monitor With Large Dynamic Range

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2021.3068628 ◽

2021 ◽

pp. 1-1

Author(s):

Kushagra Bhatheja ◽

Xiankun Jin ◽

Matthew Strong ◽

Degang Chen

Keyword(s):

Leakage Current ◽

Dynamic Range ◽

Gate Leakage Current ◽

Gate Leakage ◽

Large Dynamic Range