Off-state gate leakage current in N-channel MOSFETs with gate dielectrics prepared by different techniques

Proceedings 1995 IEEE Hong Kong Electron Devices Meeting HKDEM-95 ◽

10.1109/hkedm.1995.520637 ◽

2002 ◽

Author(s):

Zeng Xu ◽

P.T. Lai ◽

W.T. Ng

Keyword(s):

Leakage Current ◽

Gate Dielectrics ◽

Gate Leakage Current ◽

Gate Leakage

Strain Optimization to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics by Use of First-Principles Calculations

Simulation of Semiconductor Processes and Devices 2004 ◽

10.1007/978-3-7091-0624-2_18 ◽

2004 ◽

pp. 73-76

Author(s):

Yoshiharu Kanegae ◽

Hiroshi Moriya ◽

Tomio Iwasaki

Keyword(s):

Leakage Current ◽

First Principles ◽

Gate Dielectrics ◽

Silicon Oxynitride ◽

First Principles Calculations ◽

Gate Leakage Current ◽

Mos Transistors ◽

Gate Leakage ◽

Strain Optimization

First-Principles-Calculation Method for Optimizing Strain to Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics

JSME International Journal Series A ◽

10.1299/jsmea.48.14 ◽

2005 ◽

Vol 48 (1) ◽

pp. 14-19 ◽

Cited By ~ 1

Author(s):

Yoshiharu KANEGAE ◽

Hiroshi MORIYA ◽

Tomio IWASAKI

Keyword(s):

Leakage Current ◽

First Principles ◽

Calculation Method ◽

Gate Dielectrics ◽

Silicon Oxynitride ◽

First Principles Calculation ◽

Gate Leakage Current ◽

Mos Transistors ◽

Gate Leakage

Modeling and numerical simulation of gate leakage current in strained-Si channel nMOSFETs with highk gate dielectrics

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems ◽

10.1109/electro.2009.5441181 ◽

2009 ◽

Author(s):

S. Goswami ◽

A. Biswas

Keyword(s):

Numerical Simulation ◽

Leakage Current ◽

Gate Dielectrics ◽

Gate Leakage Current ◽

Gate Leakage ◽

Strained Si

Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.128.885 ◽

2008 ◽

Vol 128 (6) ◽

pp. 885-889

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

Ion Implanted

Fast Gate Leakage Current Monitor With Large Dynamic Range

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2021.3068628 ◽

2021 ◽

pp. 1-1

Author(s):

Kushagra Bhatheja ◽

Xiankun Jin ◽

Matthew Strong ◽

Degang Chen

Keyword(s):

Leakage Current ◽

Dynamic Range ◽

Gate Leakage Current ◽

Gate Leakage ◽

Large Dynamic Range

Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management

2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) ◽

10.1109/esars-itec.2018.8607551 ◽

2018 ◽

Cited By ~ 1

Author(s):

Frederic Richardeau ◽

Francois Boige ◽

Stephane Lefebvre

Keyword(s):

Leakage Current ◽

Failure Mode ◽

Safety Management ◽

Open Circuit ◽

Gate Leakage Current ◽

Gate Leakage ◽

Power Mosfet

Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(03)00220-x ◽

2003 ◽

Vol 47 (11) ◽

pp. 1973-1981 ◽

Cited By ~ 6

Author(s):

Jonghwan Lee ◽

Gijs Bosman

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Ultrathin Oxide

Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

Electronics and Communications in Japan ◽

10.1002/ecj.10213 ◽

2010 ◽

Vol 93 (6) ◽

pp. 19-24 ◽

Cited By ~ 3

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

Ion Implanted

Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current

Electrical Engineering (ICEE), Iranian Conference on ◽

10.1109/icee.2018.8472634 ◽

2018 ◽

Author(s):

Tara Ghafouri ◽

Alireza Salehi ◽

Hedie Mahmoodnia

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage

Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Solid State Ionics ◽

10.1016/j.ssi.2018.11.004 ◽

2018 ◽

Vol 328 ◽

pp. 30-34 ◽

Cited By ~ 1

Author(s):

Qi Wang ◽

Yaomi Itoh ◽

Tohru Tsuruoka ◽

Masakazu Aono ◽

Deyan He ◽

...

Keyword(s):

Oxygen Vacancy ◽

Leakage Current ◽

Gate Bias ◽

Gate Leakage Current ◽

Gate Leakage