Field-Effect Transistor-based Biosensor Optimization: Single Versus Array Silicon Nanowires Configuration

2020 ◽  
pp. 31-40
Author(s):  
Chee Chung Ong ◽  
Mohamad Faris Mohamad Fathil ◽  
Mohd Khairuddin Md Arshad ◽  
Mohammad Nuzaihan Md Nor ◽  
Ruslinda A. Rahim ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Single Versus

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

scholarly journals Femto-molar sensitive field effect transistor biosensors based on silicon nanowires and antibodies

2013 ◽  
Author(s):  
F. Puppo ◽  
M.-A. Doucey ◽  
T. S. Y. Moh ◽  
G. Pandraud ◽  
P.M. Sarro ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

(Invited) In-plane Silicon Nanowires for Field Effect Transistor Application

2019 ◽  
Vol 37 (1) ◽  
pp. 147-154
Author(s):  
Linwei Yu ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Coaxial-structured ZnO/silicon nanowires extended-gate field-effect transistor as pH sensor

2013 ◽  
Vol 529 ◽  
pp. 173-176 ◽  
Author(s):  
Hung-Hsien Li ◽  
Chi-En Yang ◽  
Chi-Chung Kei ◽  
Chung-Yi Su ◽  
Wei-Syuan Dai ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Effect Transistor

scholarly journals Silicon Nanowires: Doping Dependent N- and P- Channel Fet Behavior

2004 ◽  
Vol 832 ◽  
Author(s):  
Kumhyo Byon ◽  
John E. Fischer ◽  
Kofi W. Adu ◽  
Peter. C. Eklund
Keyword(s):  
Transport Properties ◽  
Silicon Nanowires ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Pulsed Laser ◽  
Laser Vaporization ◽  
Electrical Transport Properties ◽  
Effect Transistor

ABSTRACTThe electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.

Poly-Silicon Nanowire FET Chemical Sensor

2010 ◽  
Author(s):  
Chih-ting Lin ◽  
Che-wei Huang ◽  
Jui-ching Wang
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Sensor ◽  
Silicon Nanowire ◽  
Standard Process ◽  
Dna Virus ◽  
Nano Technology ◽  
Effect Transistor ◽  
Cmos Compatible

Based on the improvements of the fabrication technologies, the dimension of the device has decreased to tens of nanometer. The nano-technology has become intriguing to integrate semiconductor technologies into bio-related applications. As the consequence, silicon nanowires (Si NWs) have been proposed to detect proteins, DNA, virus, and ions etc. However, few of previous studies consider the possibility to merge with CMOS standard process. In this work, we announced CMOS compatible technique which is used to develop polysilicon nanowire field effect transistor (poly-Si NW FET) as a chemical sensor to address this issue.

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