Performance Analysis of an Electrostatic Doping Assisted Dual Parallel Mach-Zehnder Modulator

2021 ◽  
pp. 47-57
Author(s):  
Soumi Saha ◽  
Rohan Roy ◽  
Subhradeep Pal
Keyword(s):  
Performance Analysis ◽  
Electrostatic Doping ◽  
Mach Zehnder Modulator

scholarly journals Performance analysis of carrier depletion silicon PIN phase shifter

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri
Keyword(s):  
Performance Analysis ◽  
Bit Error Rate ◽  
Error Rate ◽  
Phase Shifter ◽  
Extinction Ratio ◽  
Fibre Length ◽  
Data Rate ◽  
Operating Voltage ◽  
Data Centre ◽  
Mach Zehnder Modulator

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.

Performance analysis of an electrostatic doping assisted silicon microring modulator

2019 ◽  
Vol 430 ◽  
pp. 131-138 ◽  
Author(s):  
Subhradeep Pal ◽  
Sumanta Gupta
Keyword(s):  
Performance Analysis ◽  
Electrostatic Doping
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