Accurate determination of the lattice parameters of ?-TiAl alloys

1996 ◽  
Vol 15 (14) ◽  
pp. 1231-1233 ◽  
Author(s):  
E. S. K. Menon ◽  
A. G. Fox ◽  
R. Mahapatra
Keyword(s):  
Accurate Determination ◽  
Lattice Parameters ◽  
Tial Alloys

Analyzing TEM Images for Accurate Determination of Lattice Parameters of Vacuum Evaporated SnSe Thin Film by Image Processing Software

2016 ◽  
Vol 1141 ◽  
pp. 51-53
Author(s):  
Chetan Zankat ◽  
V.M. Pathak ◽  
Pratik Pataniya ◽  
G.K. Solanki ◽  
K.D. Patel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Image Processing ◽  
Optical Properties ◽  
Room Temperature ◽  
Accurate Determination ◽  
Lattice Parameters ◽  
Processing Software ◽  
Image Processing Software

Amorphous SnSe thin films were deposited by thermal evaporation technique on glass substrates kept at room temperature in a vacuum better than 10-5Torr. A detailed study of structural and optical properties of 150 nm thin film was carried out. The selected area diffraction patterns obtained by TEM for this thin film were analyzed by a new method that involves accurate determination of lattice parameters by image processing software. The obtained results are in good agreement with the JCPDS data. Optical transmission spectra obtained at room temperature were analyzed to study optical properties of deposited thin films. It has been found that indirect carrier transition is responsible for optical absorption process in the deposited thin films.

Accurate determination of optical bandgap and lattice parameters of Zn1–xMgxO epitaxial films (0≤x≤0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

2013 ◽  
Vol 113 (23) ◽  
pp. 233512 ◽  
Author(s):  
Bernhard Laumer ◽  
Fabian Schuster ◽  
Martin Stutzmann ◽  
Andreas Bergmaier ◽  
Günther Dollinger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Accurate Determination ◽  
Epitaxial Films ◽  
Optical Bandgap ◽  
Lattice Parameters
Sign in / Sign up

Export Citation Format

Share Document