Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

Revealing the formation mechanism and band gap tuning of Sb2S3 nanoparticles

Sb2S3 is a promising nanomaterial for application in solar cells and other fields of electronics and optoelectronics. Sb2S3 nanoparticles were prepared via the hot-injection approach. In contrast to earlier work, the reaction temperature was decreased to 150°C, so that the reaction was slowed down and could be stopped at defined reaction stages. Thereby, the formation mechanism of the nanomaterial and the associated kinetics could be revealed. Based on morphological and structural analysis, it is suggested that seed particles (type 0) form immediately after injecting the antimony precursor into the sulfur precursor. These seeds fuse to form amorphous nanoparticles (type I) that contain a lower percentage of sulfur than that corresponding to the expected stoichiometric ratio of Sb2S3. The reason for this possibly lies in the formation of an oxygen- or carbon-containing intermediate during the seeding process. Afterward, the type I nanoparticles aggregate into larger amorphous nanoparticles (type II) in a second hierarchical assembly process and form superordinated structures (type III). This process is followed by the crystallization of these particles and a layer-like growth of the crystalline particles by an Ostwald ripening process at the expense of the amorphous particles. It was demonstrated that the kinetic control of the reaction allows tuning of the optical bandgap of the amorphous nanoparticles in the range of 2.2 – 2.0 eV. On the contrary, the optical bandgap of the crystalline particles decreases to a value of 1.7 eV and remains constant when the reaction progresses. Based on the proposed formation mechanism, future syntheses for Sb2S3 particles can be developed, allowing tuning the particles' properties in a broad range. In this way, the selective use of this material in a wide range of applications will become possible.