In-situ investigation of ZnS deposition on mica by successive ionic layer adsorption and reaction method as studied with atomic force microscopy

1995 ◽  
Vol 353 (5-8) ◽  
pp. 772-777 ◽  
Author(s):  
R. Resch ◽  
T. Prohaska ◽  
G. Friedbacher ◽  
M. Grasserbauer ◽  
T. Kanniainen ◽  
...  
1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.


1998 ◽  
Vol 136 (1-2) ◽  
pp. 131-136 ◽  
Author(s):  
Mika P Valkonen ◽  
Seppo Lindroos ◽  
Roland Resch ◽  
Markku Leskelä ◽  
Gernot Friedbacher ◽  
...  

1995 ◽  
Vol 5 (7) ◽  
pp. 985-989 ◽  
Author(s):  
T. Kanniainen ◽  
S. Lindroos ◽  
T. Prohaska ◽  
G. Friedbacher ◽  
M. Leskelä ◽  
...  

1995 ◽  
Vol 353 (5-8) ◽  
pp. 670-674
Author(s):  
T. Prohaska ◽  
G. Friedbacher ◽  
M. Grasserbauer ◽  
H. Nickel ◽  
R. L�sch ◽  
...  

1995 ◽  
Vol 67 (9) ◽  
pp. 1530-1535 ◽  
Author(s):  
Thomas. Prohaska ◽  
Gernot. Friedbacher ◽  
Manfred. Grasserbauer ◽  
Heinrich. Nickel ◽  
Rainer. Loesch ◽  
...  

1998 ◽  
Vol 361 (6-7) ◽  
pp. 716-721 ◽  
Author(s):  
G. Köllensperger ◽  
G. Friedbacher ◽  
M. Grasserbauer

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