Properties Study of SILAR Deposited Cobalt Selenide Thin Films

Thin films are attractive materials to be used in laser, solar cells, sensors, phosphors, light emitting diodes, IR windows and flat panel displays. Several deposition methods have been employed to deposit thin films as reported by many researchers. In this report, the cobalt selenide thin films have been deposited onto microscope glass slide via successive ionic layer adsorption and reaction method. This deposition method is a simple method owing to the inexpensive technique and can produce films at a low bath temperature. All the samples were investigated by using XRD, FESEM and UV-visible spectrophotometer. The XRD pattern confirmed that cubic phase cobalt selenide thin films. The FESEM image exhibited that the obtained sample is dense, uniform, and smooth surface. Keywords: XRD, FESEM, Thin films, Cobalt selenide, SILAR technique, Semiconductor, Band gap.

Recent advances in Performance and effect of Zr doping with ZnO thin film sensor in Ammonia Vapour Sensing

<p>Pure and Zr doped ZnO thin films were prepared using SILAR technique. The influence of Zr doping on structural, morphological, optical and gas sensing properties of ZnO has been reported. X-ray diffraction study confirmed the formation of wurtzite structure of ZnO thin film (JCPDS 36-1451) fabricated by SILAR technique and the caluculated crystallites size of pure and doped ZnO were 39 and 36 nm respectively . SEM analysis of thin films has shown a completely different surface morphology. EDAX spetrum cnfirmed the presence of different compositional element in the fabriated thin films. Zr (3 wt%) doped ZnO thin film exhibited the best properties with a good transmittance and it has wide band gap of 3.26 eV. Photoluminescence emissions indicated increase in concentration of oxygen vacancies with introduction of dopant. NH3 vapour sensors were fabricated out of fabricated samples and it was observed that doped samples have significantly high sensing response, good selectivity, fast response and recovery time to ammonia vapoutr at room temperature.</p>

Impact of Aluminium on ZnO Thin Films for Antimicrobial Activity

Thin films of pure Zinc Oxide (ZnO) and Aluminium (Al) doped ZnO were deposited by two step SILAR technique. Pure and Al (1%, 3%, 5%) doped ZnO thin film’s structural, morphology and optical properties were analyzed. Diffraction peaks of the all the samples were indexed to hexagonal wurtizite structure. The crystallite size, lattice parameters, dislocation density and microstrain were calculated for the prepared thin films. Morphology study using FESEM shows spherical shaped structure of pure ZnO and hexagonal faced rod like structure for Al doped ZnO thin films.T he UV-Vis absorption spectrum for the thin films was also studied. There is decrease in bandgap as the Al doping ratio increases from 1–5%. Photoluminescence (PL) studies confirm that oxygen ion vacancy and interstitial Zn+ ion were present. The maximum zone of inhibition was studied against the bacteria’s the Gram-negative (E.coli) and Gram-positive (S.aureus) by Agar diffusion method. Significant antibacterial result was seen in pure and Al doped ZnO. Al doped ZnO shows more antibacterial activity over pure ZnO. All the samples give considerable antifungal activity which was done against Aspergillusniger. .